Yazar "Ardalı, Şükrü" için listeleme
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Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
Tıraş, Engin; Çelik, Özlem; Mutlu, Selman; Ardalı, Şükrü; Lisesivdin, Sefer Bora; Özbay Ekmel (Academic Press LTD- Elsevier Science LTD, 2012)The two-dimensional (2D) electron energy relaxation in Al0.25Ga0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ... -
The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene
Arslan, Engin; Ardalı, Şükrü; Tıraş, Engin; Cakmakyapan, Semih; Özbay Ekmel (Taylor & Francis LTD, 2017)The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on an SiO2/Si substrate have been investigated using the Shubnikov-de Haas (SdH) oscillations technique. ... -
The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation
Ardalı, Şükrü; Atmaca, G.; Lisesivdin, S. B.; Malin, T.; Mansurov, V.; Zhuravlev, K.; Tıraş, Engin (Wiley-V C H Verlag GMBH, 2015)The effects of surface passivation effect on electron mobility and crystal structure in Al0.3Ga0.7N/AlN/GaN heterostructures are investigated by classical Hall effect measurements and an X-ray diffraction method. ...