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dc.contributor.authorÇağlar, Müjdat
dc.contributor.authorRüzgar, Şerif
dc.contributor.editorEgorov, NV
dc.date.accessioned2019-10-18T18:43:19Z
dc.date.available2019-10-18T18:43:19Z
dc.date.issued2014
dc.identifier.isbn978-1-4799-5772-9
dc.identifier.urihttps://hdl.handle.net/11421/10185
dc.description10th International Vacuum Electron Sources Conference (IVESC) -- JUN 30-JUL 04, 2014 -- Saint Petersburg, RUSSIAen_US
dc.descriptionWOS: 000366469900032en_US
dc.description.abstractIn preset study, the sol-gel method was used to deposit ZnO films and silicon substrates were used as substrate. The effects of deposition temperature on the structural and morphological properties of ZnO films were investigated. X-ray diffraction (XRD) measurement showed that the ZnO films were crystallized in the hexagonal wurtzite phase and presented a preferential orientation along the c-axis. The current-voltage (I-V) characteristics of the diode were performed using a KEITHLEY 2400 sourcemeter. The pn heterojunction diode was fabricated and the diode parameters were determined from the analysis of the measured dark current-voltage curves. Rectifying behavior was observed from the I-V characteristics of these heterojunction diodes.en_US
dc.description.sponsorshipIEEEen_US
dc.language.isoengen_US
dc.publisherIEEEen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titlePreparation, Structural and Morphological Properties of Nanostructure ZnO Films by Sol Gel Spin Coatingen_US
dc.typeconferenceObjecten_US
dc.relation.journal2014 Tenth International Vacuum Electron Sources Conference (Ivesc)en_US
dc.contributor.departmentAnadolu Üniversitesien_US
dc.contributor.authorIDcaglar, mujdat/0000-0001-9724-7664en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorÇağlar, Müjdat


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