Amorphous Films of Ternary Zinc and Tin Oxides for Transparent Electronics

Abstract

Amorphous films of two varieties of zinc stannate (ZnSnO3 and Zn2SnO4) have been considered that were fabricated by radio-frequency sputtering of ceramic compound targets containing ZnO and SnO2 in 1: 1 and 2: 1 ratios. The elemental and phase compositions of the films and their optical and electrical parameters were determined. The transparency of the films in the visible spectral range is on average 87%. Zinc stannate amorphous films have a high electrical conductivity in contrast to amorphous ZnO and SnO2. This phenomenon, which makes it possible to use zinc stannate amorphous films in transparent and flexible electronics, is explained.