Güncel Gönderiler: Fakülteler
Toplam kayıt 10075, listelenen: 4781-4800
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Hofmann-dahpn-tipi klatratlar: {M(H2N(CH2)7NH2)Ni(CN)4.G(M=Ni. veya Cd;G=bifenil, antrasen, veya fenantren} için FTIR spektroskopik çalışmaları
(2001)Bu çalışmada toz halde hazırlanan M(l,7-diaminoheptan)Ni(CN)4GM=Ni veya Cd; G=bifenil , antrasen veya fenantren) klatratlarının FTIR spektrumları incelendi. Klatratlann spektral verileri bu konuk moleküller için mukayese ... -
$Cd_{0.22} Zn_{0.78}S$ yarıiletken filminin akım-voltaj karakteristiği
(2003)Bu çalışmada, spray pyrolysis yöntemiyle 275±5°C taban sıcaklığında elde edilen $Cd_{0.22} Zn_{0.78}S$ yarıiletken filminin elektriksel özellikleri incelenmiştir. Film n-tipi iletkenlik göstermektedir. Elektriksel ölçümler ... -
$CuInS-{2}$ yarıiletken filiminin optik özellikleri
(2001)Bu araştırmada, spray pyrolysis yöntemiyle farklı taban sıcaklıklarında elde edilen $CuInS-{2}$ yarıiletken bileşiğinin, oda sıcaklığında çekilen absorpsiyon spektrumlarmdan enerji bant aralıkları hesaplanmıştır. -
Kuaternion cebri ve kuaternionların matris temsillerine bir bakış
(2001)Bu çalışmada kuaternionların genel tanımı yapıldıktan sonra kuaternion-vektör ilişkisi incelenmiş ve kuaternion çarpımına ilişkin birçok yararlı eşitlik tanımlanmıştır. Daha sonra, kuaternionların matrislerle temsili ... -
Influence of substrate temperature on structural and electrical properties of ZnO films
(2006)Çinko oksit (ZnO) filmleri püskürtme yöntemi kullanılarak farklı taban sıcaklıklarında üretilmiştir. Üretilen bu filmlerin yapısal ve elektriksel özelliklerine taban sıcaklığının etkisi incelenmiştir. Filmlerin x-ışınları ... -
Zeolit ve silikalit'li katalizörler
(2001)Ulaşım, ısınma ve endüstri tesisleri hava kirliliğine neden olan üç ana kaynaktır . Hava kirliliğine neden olan bu faktörler içerisinde, ulaşımdan kaynaklanan kirlilik, en büyük orana ve en zarar verici etkiye sahiptir. ... -
Elektromagnetik teorinin kuaternionlarla incelenmesi
(2003)Bu çalışmada, reel ve kompleks sayılar gibi bir sayı sistemi olan kuaternion ve kompleks kuatemionların tanımı yapılmıştır. Daha sonra kuaternion ve kompleks kuartenion cebirleri kullanılarak Maxwell denklemlerinin,süreklilik ... -
Electrical and optical performance of InAs / AlSb / GaSb superlattice photodetector
(TANGER Ltd., 2015)We report on electrical and optical performance of InAs/AlSb/GaSb type-II superlattice photodetectors. The detector structure is designed to operate in the MWIR domain with a cut-off wavelength of 4.3 µm at 125 K. The ... -
Dielectric, structural and spectroscopic properties of mg-doped CaCu3ti4o12 ceramics by the solid-state reaction method
(American Ceramic Society, 2017)Since the discovery of the gigantic dielectric constant in the CCTO supercapacitor in 2000, development of its practical application for energy storage has been of great interest. In this study, the CaCu3Ti4O12 (CCTO) and ... -
Structural and dielectric properties of (1-x) Li2TiO3 + xmgo ceramics prepared by the solid state reaction method
(American Ceramic Society, 2017)In this study, (1- x) Li2TiO3 + xMgO (x= 0, 0.1, 0.3, and 0.5) ceramic samples were prepared by the solid-state reaction method and characterized using X-ray diffraction spectra and Raman Spectroscopy. The samples sintered ... -
Nitrate removal from aqueous solution by hexadecyltrimethylammoniumbromide- modified clinoptilolite
(2011)In the first stage of study, detailed characterization studies were performed on clinoptilolite-rich tuff mined from the Gördes/Manisa region (Turkey). The physical and chemical properties were determined using instrumental ... -
Biquaternionic description of the Schrödinger equation
(2012)This paper begins with the introduction of biquaternion algebra and its properties in compact, profound and comprehensible approach. The Schrödinger equation including both the scalar Aharonov-Bohm(sAB) and Aharonov-Casher(AC) ... -
Plane symmetric solutions of gravitational field equations in five dimensions
(2006)We present the effective field equations obtained from a generalized gravity action with Euler-Poincaré term and a cosmological constant in a D dimensional bulk space-time. A class of plane-symmetric solutions that describe ... -
Semiconductor shallow impurity level transitions for terahertz generation and detection
(Optical Society of America (OSA), 2014)[No abstract available] -
Determination of the electron effective mass of 2D electrons in AlGaN/AlN/GaN heterostructure by Ramanscattering measurements
(2012)The electron effective mass in AlGaN/AlN/GaN heterostructure grown by the metalorganic chemical vapor deposition (MOCVD) technique was determined from the phonon-plasmon coupled-mode line-shape analysis of vibrational ... -
Influence of the thickness on physical properties of chemical bath deposited hexagonal ZnS thin films
(2007)Hexagonal ZnS thin films of thicknesses ranging between 454 to 750 nm are deposited on a glass substrate by chemical bath deposition at 80 °C. The ZnS thin films are characterized by X-ray diffraction (XRD) and optical ... -
The effect of deposition parameters on the physical properties of Cd xZn1-xS films deposited by spray pyrolysis method
(2007)The spray pyrolysis method for the deposition of thin solid films is a good method for the preparation of thin films suitable for scientific studies and for many applications in technology and industry. This method was ... -
Optical characterization of the CdZn(S1-xSex) 2 thin films deposited by spray pyrolysis method
(2006)CdZn(S1-xSex)2 thin films have been deposited onto glass substrates by the spray pyrolysis method at a 275°C substrate temperature. The average optical transmittance of all the films was over 65% in the wavelength range ... -
Broadband asymmetric quantum-well infrared photodetector in Long-Wavelength Infrared Range (LWIR)
(2007)A theoretical investigation of a GaAs-AlGaAs infrared detector consisting of three asymmetric quantum wells is presented. Each quantum well is sensitive to yield absorption and a photoresponse at peak wavelengths of 8 µm, ... -
Structural and optical properties of Al2O3 with Si and Ge nanocrystals
(2007)Si and Ge nanocrystals were formed in Al2O3 matrix by ion implantation and subsequent annealing. The phase separation of the Si nanocrystals was observed using X-ray photoelectron spectroscopy by monitoring Si 2p electrons. ...
