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dc.contributor.authorArdalı, Şükrü
dc.contributor.authorAtmaca, G.
dc.contributor.authorLisesivdin, S. B.
dc.contributor.authorMalin, T.
dc.contributor.authorMansurov, V.
dc.contributor.authorZhuravlev, K.
dc.contributor.authorTıraş, Engin
dc.date.accessioned2019-10-20T09:02:47Z
dc.date.available2019-10-20T09:02:47Z
dc.date.issued2015
dc.identifier.issn0370-1972
dc.identifier.issn1521-3951
dc.identifier.urihttps://dx.doi.org/10.1002/pssb.201552135
dc.identifier.urihttps://hdl.handle.net/11421/16518
dc.descriptionWOS: 000360671200008en_US
dc.description.abstractThe effects of surface passivation effect on electron mobility and crystal structure in Al0.3Ga0.7N/AlN/GaN heterostructures are investigated by classical Hall effect measurements and an X-ray diffraction method. Al0.3Ga0.7N/AlN/GaN heterostructures with different doping and layer structures were grown by molecular beam epitaxy with or without growing an in situ SiN passivation layer. The classical Hall effect measurements were carried out as a function of temperature in the range between T=1.82K and 270K at a fixed magnetic field in dark conditions. The effect of doping of the barrier layer and replacing an AlN inter-layer between the AlGaN barrier and the GaN layer, where the two-dimensional electron gas is populated, on mobility and sheet carrier concentration were also determined.en_US
dc.description.sponsorshipTUBITAK Ankara [113F364]; RFBR [13-02-00985, 14-02-91371]en_US
dc.description.sponsorshipWe are grateful to TUBITAK Ankara (project no: 113F364) and RFBR (under grants no. 13-02-00985 and 14-02-91371).en_US
dc.language.isoengen_US
dc.publisherWiley-V C H Verlag GMBHen_US
dc.relation.isversionof10.1002/pssb.201552135en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGanen_US
dc.subjectMobilityen_US
dc.subjectSurface Passivationen_US
dc.titleThe variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivationen_US
dc.typearticleen_US
dc.relation.journalPhysica Status Solidi B-Basic Solid State Physicsen_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume252en_US
dc.identifier.issue9en_US
dc.identifier.startpage1960en_US
dc.identifier.endpage1965en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorArdalı, Şükrü
dc.contributor.institutionauthorTıraş, Engin


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