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dc.contributor.authorAtmaca, G.
dc.contributor.authorArdalı, Şükrü
dc.contributor.authorTıraş, Engin
dc.contributor.authorMalin, T.
dc.contributor.authorMansurov, V. G.
dc.contributor.authorZhuravlev, K. S.
dc.contributor.authorLisesivdin, S. B.
dc.date.accessioned2019-10-20T09:02:47Z
dc.date.available2019-10-20T09:02:47Z
dc.date.issued2016
dc.identifier.issn0038-1101
dc.identifier.issn1879-2405
dc.identifier.urihttps://dx.doi.org/10.1016/j.sse.2016.01.006
dc.identifier.urihttps://hdl.handle.net/11421/16520
dc.descriptionWOS: 000369831300003en_US
dc.description.abstractThe scattering mechanisms limiting mobility for low-dimensional charge carriers in a two-dimensional electron gas (2DEG) in undoped and doped AlGaN/AlN/GaN heterostructures with and without Si3N4 passivation are investigated. Hall effect measurements were carried out at temperatures from 1.8 K to 262 K and at a fixed magnetic field of 1 T. A good consistency was found between the calculated and the experimental results. The effects of in situ Si3N4 passivation on the 2DEG mobility are also discussed with majority scattering mechanisms. Interface-related parameters including quantum well width, deformation potential constant and correlation length of interface roughness were obtained from the fits of the analytical expressions of scattering mechanisms and compared for each heterostructure. After in situ Si3N4 passivation, we found that the effect of the interface roughness scattering, which was the dominant scattering mechanism at low temperatures, on the 2DEG mobility was more effective in undoped and doped AlGaN/GaN heterostructuresen_US
dc.description.sponsorshipTUBITAK [113F364]; RFBR [13-02-00985, 14-02-91371]en_US
dc.description.sponsorshipThis work is supported by TUBITAK under Project No. 113F364 and RFBR (under Grants No. 13-02-00985 and 14-02-91371).en_US
dc.language.isoengen_US
dc.publisherPergamon-Elsevier Science LTDen_US
dc.relation.isversionof10.1016/j.sse.2016.01.006en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAlganen_US
dc.subjectGanen_US
dc.subject2Degen_US
dc.subjectSin Passivationen_US
dc.subjectScattering Analysisen_US
dc.subjectDislocation Densityen_US
dc.titleScattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layeren_US
dc.typearticleen_US
dc.relation.journalSolid-State Electronicsen_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume118en_US
dc.identifier.startpage12en_US
dc.identifier.endpage17en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorArdalı, Şükrü
dc.contributor.institutionauthorTıraş, Engin


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