Gelişmiş Arama

Basit öğe kaydını göster

dc.contributor.authorÇağlar, Müjdat
dc.contributor.authorÇağlar, Yasemin
dc.contributor.authorIlıcan, Saliha
dc.contributor.editorStutzmann, M
dc.date.accessioned2019-10-20T09:03:01Z
dc.date.available2019-10-20T09:03:01Z
dc.date.issued2007
dc.identifier.issn1862-6351
dc.identifier.urihttps://dx.doi.org/10.1002/pssc.200673744
dc.identifier.urihttps://hdl.handle.net/11421/16601
dc.description10th Europhysical Conference on Defects in Insulating Materials -- JUL 10-14, 2006 -- Milan, ITALYen_US
dc.descriptionWOS: 000246104300150en_US
dc.description.abstractTransparent conducting undoped and indium-doped zinc oxide (ZnO) thin films have been deposited by the spray pyrolysis method at 350 degrees C substrate temperature. X-ray diffraction spectra of the films have shown that the films are polycrystalline and hexagonal wurtzite in structure. The average optical transmittance of 1% indium-doped ZnO thin films was over 84% in the visible range. The direct band gap value of the undoped ZnO film was calculated. Electrical conductivity measurement of Ag-ZnO:In-Ag structures have been carried out using the two-probe method in dark, in the range of temperature from 90 to 320 K. The conductivity of undoped and indium-doped ZnO films increases with increase in temperature. The incorporation of indium in the ZnO film enhanced the conductivity. The conductivity of 1 at.% In-doped film is higher than undoped ZnO at room temperature. The activation energies E, values in the range of 90-320 K temperatures were also determineden_US
dc.description.sponsorshipT.R. Prime Ministry State Planning Organization [97K120390]en_US
dc.description.sponsorshipThe financial support of T.R. Prime Ministry State Planning Organization is gratefully acknowledged (project no. 97K120390). The authors are grateful to Anadolu University Department of Materials Science and Engineering for the XRD and SEM measurements.en_US
dc.language.isoengen_US
dc.publisherWiley-V C H Verlag GMBHen_US
dc.relation.ispartofseriesPhysica Status Solidi C-Current Topics in Solid State Physics
dc.relation.isversionof10.1002/pssc.200673744en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleElectrical and optical properties of undoped and In-doped ZnO thin filmsen_US
dc.typeconferenceObjecten_US
dc.relation.journalPhysica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 3en_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume4en_US
dc.identifier.issue3en_US
dc.identifier.startpage1337en_US
dc.identifier.endpage+en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorÇağlar, Müjdat
dc.contributor.institutionauthorÇağlar, Yasemin
dc.contributor.institutionauthorIlıcan, Saliha


Bu öğenin dosyaları:

Thumbnail

Bu öğe aşağıdaki koleksiyon(lar)da görünmektedir.

Basit öğe kaydını göster