Electrical and optical performances with extracted minority carrier lifetimes of InAs/GaSb SL photodetector operating in the mid wavelength infrared range

Abstract

We report a study on the temperature dependence of electrical and optical performance of InAs/GaSb based type-II superlattice (T2SL) pin photodetectors in the mid wavelength infrared range (MWIR). The SL structure exhibits an optical response of 50% cut-off wavelength at 4.9 gm at 79 K. Deduced from current density voltage (J-V) measurements, dark current density under 0.1 V reverse bias is measured as 7.6 x 10(-6) A/cm(2) with a corresponding differential-resistance-area product (R(0)A) of 3.3 x 10(4) Omega cm(2) at 100 K. Minority carrier lifetimes of the T2SL detectors are analysed by Shockley's Model where experimental data for dark current densities are fitted by diffusion and generation recombination (GR) components at different temperatures.