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dc.contributor.authorTıraş, Engin
dc.contributor.authorArdalı, Şükrü
dc.date.accessioned2019-10-20T09:14:15Z
dc.date.available2019-10-20T09:14:15Z
dc.date.issued2013
dc.identifier.issn1434-6028
dc.identifier.urihttps://dx.doi.org/10.1140/epjb/e2012-30369-6
dc.identifier.urihttps://hdl.handle.net/11421/17196
dc.descriptionWOS: 000314287200002en_US
dc.description.abstractThe electron effective masses in n-type modulation doped Ga0.7In0.3NyAs1-y/GaAs quantum wells with nitrogen mole fractions of y = 0.004 and 0.010 were investigated experimentally. Two experimental techniques: magnetic field dependent photoluminescence measurements and phonon-plasmon coupled-mode line-shape analysis of vibrational spectroscopy measurements, were employed in the investigations. In the first technique, the effective masses of the electrons have been determined from the diamagnetic energy shift dependencies up to 11 T. The vibrational properties of the samples were studied using Raman scattering spectroscopy at room temperature. The effective masses obtained from both two techniques are in good agreement with the current results in the literature.en_US
dc.description.sponsorshipTUBITAK [110T377]; Anadolu University [BAP-1001F99]en_US
dc.description.sponsorshipWe acknowledge the collaboration within the COST Action MP0805 entitled Novel Gain Materials and Devices Based on III-V-N Compounds and TUBITAK (Project no: 110T377) and Anadolu University (Project no: BAP-1001F99) for financial support.en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.relation.isversionof10.1140/epjb/e2012-30369-6en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleContactless electron effective mass determination in GaInNAs/GaAs quantum wellsen_US
dc.typearticleen_US
dc.relation.journalEuropean Physical Journal Ben_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume86en_US
dc.identifier.issue1en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorTıraş, Engin
dc.contributor.institutionauthorArdalı, Şükrü


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