Gelişmiş Arama

Basit öğe kaydını göster

dc.contributor.authorTıraş, Engin
dc.contributor.authorBalkan, Naci
dc.contributor.authorArdalı, Şükrü
dc.contributor.authorGüneş, M.
dc.contributor.authorFontaine, C.
dc.contributor.authorArnoult, A.
dc.date.accessioned2019-10-20T09:14:16Z
dc.date.available2019-10-20T09:14:16Z
dc.date.issued2011
dc.identifier.issn1478-6435
dc.identifier.urihttps://dx.doi.org/10.1080/14786435.2010.525543
dc.identifier.urihttps://hdl.handle.net/11421/17198
dc.descriptionWOS: 000286773800009en_US
dc.description.abstractElectronic transport in n-and p-type modulation-doped Ga0.7In0.3N0.015As0.985/GaAs quantum wells are investigated using magneto-transport measurements in the temperature range between T = 1.8 and 32K and at magnetic fields up to B = 11T. The momentum relaxation and the quantum lifetimes (tau(q)) of electrons and holes are obtained directly from the temperature and magnetic field dependencies of the SdH oscillation amplitudes, respectively. A detailed analysis of quantum and transport life times indicates that the momentum relaxation of holes is forward displaced in k-space, while a large angle-scattering mechanism is prominent for the electrons. This discrepancy is believed to be due to scattering of electrons with nitrogen complexes and to the lack of such a mechanism for holes.en_US
dc.description.sponsorshipScientific and Technical Research Council of Turkey TUBITAK [110T377]; Anadolu University [091047]; COST Action [MP0805]en_US
dc.description.sponsorshipET is grateful to the Scientific and Technical Research Council of Turkey TUBITAK (Project No: 110T377) and Anadolu University (Project No: 091047) for financial support. We also acknowledge the support of COST Action: MP0805 for providing a suitable platform for the successful execution of this research.en_US
dc.language.isoengen_US
dc.publisherTaylor & Francis LTDen_US
dc.relation.isversionof10.1080/14786435.2010.525543en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGainnasen_US
dc.subjectEffective Massen_US
dc.subjectQuantum Lifetimeen_US
dc.titleQuantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wellsen_US
dc.typearticleen_US
dc.relation.journalPhilosophical Magazineen_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume91en_US
dc.identifier.issue4en_US
dc.identifier.startpage628en_US
dc.identifier.endpage639en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorTıraş, Engin
dc.contributor.institutionauthorArdalı, Şükrü


Bu öğenin dosyaları:

Thumbnail

Bu öğe aşağıdaki koleksiyon(lar)da görünmektedir.

Basit öğe kaydını göster