Characterization of a multilayer GaAs/AlGaAs broadband quantum well infrared photodetectors

Abstract

In this study, we report on the investigation of two multilayer GaAs/AlGaAs quantum well infrared photodetectors designed for 8-12 µm spectral range detection. Fabricated devices were characterized by current-voltage and photoresponse measurements as a function of applied bias. Background-limited infrared performance (BLIP) temperatures were performed to determine the optimum bias value for photoresponse for each detector. Photoresponse measurements clearly presented that both devices have responses at the expected spectral region; 8-12 µm.