| dc.contributor.author | Vazquez-Cordova, Sergio A. | |
| dc.contributor.author | Dijkstra, Meindert | |
| dc.contributor.author | Bernhardi, Edward H. | |
| dc.contributor.author | Ay, Feridun | |
| dc.contributor.author | Worhoff, Kerstin | |
| dc.contributor.author | Herek, Jennifer L. | |
| dc.contributor.author | Pollnau, Markus | |
| dc.date.accessioned | 2019-10-21T20:11:39Z | |
| dc.date.available | 2019-10-21T20:11:39Z | |
| dc.date.issued | 2014 | |
| dc.identifier.issn | 1094-4087 | |
| dc.identifier.uri | https://dx.doi.org/10.1364/OE.22.025993 | |
| dc.identifier.uri | https://hdl.handle.net/11421/20285 | |
| dc.description | WOS: 000344004600137 | en_US |
| dc.description | PubMed ID: 25401633 | en_US |
| dc.description.abstract | Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 x 10(20) cm(-3) and 0.95 x 10(20) cm(-3), respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied | en_US |
| dc.description.sponsorship | Dutch Technology Foundation (STW) [11689]; CONACyT | en_US |
| dc.description.sponsorship | This work was supported by the Dutch Technology Foundation (STW) within the framework of project No. 11689. Sergio A. Vazquez-Cordova gratefully acknowledges CONACyT for its partial scholarship support of his postgraduate studies. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Optical Soc Amer | en_US |
| dc.relation.isversionof | 10.1364/OE.22.025993 | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.title | Erbium-doped spiral amplifiers with 20 dB of net gain on silicon | en_US |
| dc.type | article | en_US |
| dc.relation.journal | Optics Express | en_US |
| dc.contributor.department | Anadolu Üniversitesi, Mühendislik Fakültesi, Elektrik ve Elektronik Mühendisliği Bölümü | en_US |
| dc.identifier.volume | 22 | en_US |
| dc.identifier.issue | 21 | en_US |
| dc.identifier.startpage | 25993 | en_US |
| dc.identifier.endpage | 26004 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
