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Toplam kayıt 5, listelenen: 1-5
Wetting and non-wetting behaviour of silicon carbide grain boundaries
(Transtec Publications LTD, 1999)
Silicon carbide (SiC) grain boundaries have been observed to be free from intergranular films. On the basis of equilibrium film thickness calculations, it has been proposed elsewhere that because SiC has very high refractive ...
The crystallography of interphase boundaries between silicon carbide and silicon nitride in silicon nitride - Silicon carbide particulate composites
(Kluwer Academic Publ, 2000)
Interphase boundaries between 3C SiC grains and two different beta-Si3N4 morphologies in Si3N4-SiC composites have been studied by transmission electron microscopy. In general, boundaries between small beta-Si3N4 intragranular ...
Interphase boundaries between hexagonal boron nitride and beta silicon nitride in silicon nitride-silicon carbide particulate composites
(1997)
Inter phase boundaries between hexagonal boron nitride and Q-Si3N4 in hot isostatically pressed Si3N4-SiC particulate composites, in which boron nitride appears as a trace contaminant, have been examined using high resolution ...
The Crystallography of Interphase Boundaries Between Silicon Carbide and Silicon Nitride in Silicon Nitride— Silicon Carbide Particulate Composites
(Kluwer Academic Publishers, Dordrecht, Netherlands, 2000)
Interphase boundaries between 3C SiC grains and two different ß-Si3N4 morphologies in Si3N4-SiC composites have been studied by transmission electron microscopy. In general, boundaries between small ß-Si3N4 intragranular ...
Interphase boundaries between hexagonal boron nitride and beta silicon nitride in silicon nitride silicon carbide particulate composites
(Elsevier Sci LTD, 1997)
Interphase boundaries between hexagonal boron nitride and beta-Si3N4 in hot isostatically pressed Si3N4-SiC particulate composites, in which boron nitride appears as a trace contaminant, have been examined using high ...