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dc.contributor.authorEygi, Zeynep Deniz
dc.contributor.authorKulakçı, Mustafa
dc.contributor.authorTuran, Raşit
dc.date.accessioned2019-10-23T17:56:16Z
dc.date.available2019-10-23T17:56:16Z
dc.date.issued2014
dc.identifier.issn0169-4332
dc.identifier.issn1873-5584
dc.identifier.urihttps://dx.doi.org/10.1016/j.apsusc.2014.01.145
dc.identifier.urihttps://hdl.handle.net/11421/22897
dc.description9th Nanoscience and Nanotechnology Conference (NANOTR) -- JUN 24-28, 2013 -- Erzurum, TURKEYen_US
dc.descriptionWOS: 000344380500023en_US
dc.description.abstractMetal induced crystallization is a widely used method to form crystalline/polycrystalline structures at low temperatures. In this work, Au was applied to enhance the crystallization of amorphous Ge films. Ge films with thicknesses of similar to 1.5 mu m were fabricated by electron beam evaporation on c-Si substrate with and without very thin Au layer. Crystallization properties of Ge films were analyzed for different growth and post annealing temperatures varied between 270 degrees C and 730 degrees C. The structures of polycrystalline Ge films were investigated by employing X-ray diffraction (XRD), Raman spectra and scanning electron microscopy (SEM). The existence of thin Au layer showed significant impact on the crystallization of amorphous Ge films in terms of reducing the crystallization temperature. In post annealing processes, it was noticed that the impact of Au thin layer on crystallization slightly reduces above the temperature of similar to 400 degrees C, and almost no remarkable differences were observed between the films with and without Au layer in this temperature region. It is observed that the growth temperature has a stronger effect on the crystallization than post annealing temperatures in the presence of Au thin film. It is also shown that Au layer catalyzes the axial growth in the presence of planar Ge layer on the substrate surfaceen_US
dc.language.isoengen_US
dc.publisherElsevier Science BVen_US
dc.relation.isversionof10.1016/j.apsusc.2014.01.145en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPoly-Geen_US
dc.subjectMetal Induced Crystallizationen_US
dc.subjectAxial Growthen_US
dc.titleEffect of Au on the crystallization of germanium thin films by electron-beam evaporationen_US
dc.typeconferenceObjecten_US
dc.relation.journalApplied Surface Scienceen_US
dc.contributor.departmentAnadolu Üniversitesi, Yer ve Uzay Bilimleri Enstitüsüen_US
dc.identifier.volume318en_US
dc.identifier.startpage116en_US
dc.identifier.endpage120en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US]


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