alpha-In2S3 and beta-In2S3 phases produced by SILAR technique

Abstract

In2S3 films have been deposited by the successive ionic adsorption and reaction technique (SILAR) at room temperature. The films have been examined to evaluate the structural and optical properties. X-ray diffraction spectra have revealed the presence of both the alpha-In2S3 (cubic) and beta-In2S3 (tetragonal) phases. The presence of the alpha-In2S3 phase at room temperature is attributed to the richness of In in the deposited materials. The presence of both phases is also supported by FESEM observations. The crystallinity of the material has been observed to improve with increasing thickness. Direct band gap of the deposits decreased from 2.89 to 2.37 eV with increasing thickness.