Ara
Toplam kayıt 5, listelenen: 1-5
Determination of dislocation densities in InN
(Wiley-V C H Verlag GMBH, 2012)
The magneto-transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. ...
Power-loss mechanisms in surface passivated AlGaN/AlN/GaN heterojunctions
(Institute of Electrical and Electronics Engineers Inc., 2016)
The surface passivation effect on the power-loss mechanisms in AlGaN/AlN/GaN heterostructures was investigated. The electron temperatures of hot electrons was obtained from the temperature and the applied electric field ...
Longitudinal polar optical phonons in InN/GaN single and double heterostructures
(Wiley-V C H Verlag GMBH, 2011)
Longitudinal optical phonon energy in InN epi-layers has been determined independently from the Raman spectroscopy and temperature dependent Hall mobility measurements. Raman spectroscopy technique can be used to obtain ...
Superconductivity in MBE grown InN
(Wiley-V C H Verlag GMBH, 2011)
We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82K, for an 1080 nm InN ...
Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs
(Wiley-V C H Verlag GMBH, 2011)
Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained ...