Yazar "Serincan, Uğur" için listeleme
-
Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces
Arıkan, Bülent; Korkmaz, Melih; Aslan, Bülent; Serincan, Uğur (Elsevier Science Sa, 2015)In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically ... -
Structural and optical properties of Al2O3 with Si and Ge nanocrystals
Yerci, S.; Yıldız, I.; Seyhan, A.; Kulakçı, M.; Serincan, Uğur; Shandalov, M.; Turan, R. (2007)Si and Ge nanocrystals were formed in Al2O3 matrix by ion implantation and subsequent annealing. The phase separation of the Si nanocrystals was observed using X-ray photoelectron spectroscopy by monitoring Si 2p electrons. ... -
Structural and optical properties of porous nanocrystalline Ge
Nanocrystalline Ge films were prepared by isotropic chemical etching on single-crystalline Ge substrates with 100 and 111 orientations. The structural and optical properties have been investigated by transmission electron ... -
Structural, optical and electrical characterization of InAs0.83Sb0.17 p-pi-n photodetector grown on GaAs substrate
Erkus, M.; Şenel, O.; Serincan, Uğur (Elsevier Science Sa, 2016)High quality InAs0.83Sb0.17 mid-wavelength infrared p-pi-n photodetector structure was grown with the aid of a GaSb transition layer on semi-insulating GaAs substrate by molecular beam epitaxy. The lattice mismatch and the ... -
UNPASSIVATED HIGH OPERATING TEMPERATURE GaInAsSb INFRARED PHOTODETECTOR GROWN ON GaAs SUBSTRATE
Serincan, Uğur; Erkuş, Mehmet; Şenel, Onur (2017)Ga0.87In0.13As0.4Sb0.96 photodiode structure was grown on semi-insulating 4" GaAs substrate by molecular beam epitaxy. The composition, crystal quality and dislocation density of epilayers were determined by high ... -
Variation of photoluminescence from Si nanostructures in SiO2 matrix with Si+ post implantation
Serincan, Uğur; Kulakçı, M.; Turan, Raşit; Foss, S.; Finstad, T. G. (2007)Si nanoclusters were formed by 28Si ion implantation into SiO2 matrix and subsequently annealed at 1050 °C for 2 h under N2 ambient. The photoluminescence (PL) characteristics depend on the 28Si fluence. The PL signals ... -
Yakın ve orta dalgaboylu kızılötesi bölgede çalışan tek piksel kızılötesi algılayıcılarda pasivasyon etkisinin incelenmesi
Serincan, Uğur; Anadolu Üniversitesi, Fen Bilimleri Enstitüsü, Fizik Anabilim Dalı; Şenel, Onur (Tez (yüksek lisans) - Anadolu Üniversitesi, 2018)Günümüzde yarıiletkenler yaygın olarak askeri, sağlık ve astronomi alanlarında kullanılmaktadır. Dedektörler, transistörler, lazerler ve güneş pilleri bu alanlardaki en yaygın kullanılan yarıiletken malzemelere örnektir. ...