Yazar "Aslan, Bülent" için listeleme
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Binding energies and oscillator strengths of impurity states in wurtzite InGaN/GaN staggered quantum wells
Yıldırım, Hasan; Aslan, Bülent (Amer Inst Physics, 2012)Using the variational methods, we have calculated the binding energies of the lowest donor states, 1s and 2p(+/-), in wurtzite InGaN/GaN staggered quantum wells. The binding energies in narrow wells are larger in magnitude ... -
Characterization of epitaxially grown III-V nanostructures by electron microscopy
Suyolcu, Yusuf Eren (Anadolu Üniversitesi, 2014)Epitaksiyel olarak büyütülen III-V grubu yarıiletken nanoyapılar elektron mikroskopi teknikleri ile araştırılmıştır. Özellikle, kızılötesi fotoalgılayıcı olarak tasarlanan InAs/GaSb tip-II süperörgü (SL) ve kendiliğinden ... -
Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p-i-n versus residual doping
Korkmaz, Melih; Kaldirim, Melih; Arıkan, Bülent; Serincan, Uğur; Aslan, Bülent (IOP Publishing LTD, 2015)We report on the opto-electronic characterization of an InAs/GaSb superlattice (SL) midwave infrared p-i-n photodetector structure (pin-SL) in comparison with the same structure with no intentional doping (i-SL). Both ... -
Donor-related third-order optical nonlinearites in GaAs/AlGaAs quantum wells at the THz region
Yıldırım, Hasan; Aslan, Bülent (IOP Publishing LTD, 2011)GaAs/AlGaAs quantum wells doped with donor atoms are investigated for nonlinear optical applications in the THz range. The electronic properties of the quantum wells are obtained numerically by applying an iterative shooting ... -
Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
Tansel, Tunay; Kutluer, Kutlu; Salihoğlu, Ömer; Aydınlı, Atilla; Aslan, Bülent; Arıkan, Bülent; Turan, Raşit (IEEE-Inst Electrical Electronics Engineers Inc, 2012)The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ... -
Effects of magnetic field on the terahertz nonlinear optical properties in donor-doped GaAs/AlGaAs quantum wells
Yıldırım, Hasan; Aslan, Bülent (Wiley-V C H Verlag GMBH, 2012)Effects of the magnetic field on nonlinear optical properties at THz range in GaAs/AlGaAs quantum wells doped with donor atoms are investigated. Expressions for the third-order nonlinear optical susceptibilities are obtained ... -
Influence of the growth conditions on the optical and structural properties of self-assembled InAs/GaAs quantum dots for low As/In ratio
Özdemir, Samet; Suyolcu, Y. Eren; Turan, Servet; Aslan, Bülent (Elsevier Science BV, 2017)We report on the growth and characterization of self-assembled InAs/GaAs quantum dots (QDs). The influence of the systematically changed growth conditions on the opto-electronic and structural properties of the QDs were ... -
Influence of the lattice mismatch on the lattice vibration modes for InAs/GaSb superlattices
Aslan, Bülent; Korkmaz, Melih (Elsevier Science BV, 2016)Raman scattering study on a group of InAs/GaSb superlattice (SL) samples where the strain is systematically changed from tensile to compressive regime is presented. The effect of the lattice mismatch between the substrate ... -
Intersubband transitions in InxGa1-xN/InyGa1-yN/GaN staggered quantum wells
Yıldırım, Hasan; Aslan, Bülent (Amer Inst Physics, 2014)Intersubband transition energies and absorption lineshape in staggered InGaN/GaN quantum wells surrounded by GaN barriers are computed as functions of structural parameters such as well width, In concentrations, and the ... -
Kızılötesi algılamada kullanılan kendiliğinden oluşan InAs/GaAs kuantum nokta yapıların MBE tekniğiyle büyütülmesi ve karakterizasyonu
Özdemir, Samet (Anadolu Üniversitesi, 2014)Bu tez kapsamında, tek katman ve çok katman InAs/GaAs kuantum nokta yapıların moleküler demet epitaksi sistemi ile büyütülmesi ve karakterizasyonları yapılmıştır. Kuantum nokta yapıların, fotolüminesans (PL) spektrumunda ... -
On the donor states in double InxGa1-xN/InyGa1-yN/GaN staggered quantum wells
Yıldırım, Hasan; Aslan, Bülent (IOP Publishing LTD, 2013)We have calculated the binding energies of the donor states, 1s and 2p +/-, with respect to the lowest sub-band energy in a double quantum well composed of wurtzite InGaN staggered quantum wells with GaN barriers. All the ... -
On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses
Arıkan, Bülent; Korkmaz, Güven; Suyolcu, Yusuf Eren; Aslan, Bülent; Serincan, Uğur (Elsevier Science Sa, 2013)We report on the detailed epitaxial growth conditions for type-II InAs/GaSb superlattice (SL) structures designed for mid-wave infrared detection. The mismatch between the GaSb buffer and the SL is precisely controlled by ... -
Orta-kızılötesi dalgaboyunda çalışan InAs/GaSb süperörgü fotodiyotların opto-elektronik karakterizasyonu
Korkmaz, Melih (Anadolu Üniversitesi, 2014)Bu çalışmada, orta-kızılötesi bölgesinde çalışan InAs/GaSb süperörgü fotodiyotların opto-elektronik karakterizasyonları yapılmıştır. Hall etkisi ölçümleriyle InAs ve GaSb malzemeleri için katkı kalibrasyonları tamamlanmış; ... -
Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array
Korkmaz, Melih; Arıkan, Bülent; Suyolcu, Yusuf Eren; Aslan, Bülent; Serincan, Uğur (IOP Publishing LTD, 2018)We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the ... -
Second harmonic generation in asymmetric MgSe/CdSe/ZnCdMgSe quantum well structures
Yıldırım, Hasan; Aslan, Bülent (Wiley-V C H Verlag GMBH, 2017)MgSe/CdSe/ZnCdMgSe step quantum well structures and coupled quantum well structures under an applied electric field have been investigated for the process of second harmonic generation (SHG) with the double-resonant ... -
Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces
Arıkan, Bülent; Korkmaz, Melih; Aslan, Bülent; Serincan, Uğur (Elsevier Science Sa, 2015)In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically ... -
Tek kuantum kuyu üzerinden tınlaşım tünelleme olayının optoelektronik olarak incelenmesi
Şevik, Ayşe (Anadolu Üniversitesi, 2014)Tınlaşım tünelleme diyotları uzun yıllar önce önerilmiş olmasına rağmen hala bazı temel fizik sorularını aydınlatacak ve birçok yeni uygulamada kullanılacak potansiyele sahiptir. Tınlaşım tünelleme aygıtları, özellikle son ...
