Browsing by Author "Aydınlı, Atilla"
Now showing items 1-7 of 7
-
Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers
Arslan, Seval; Demir, Abdullah; Şahin, Seval; Aydınlı, Atilla (IOP Publishing LTD, 2018)In semiconductor lasers, quantum well intermixing (QWI) with high selectivity using dielectrics often results in lower quantum efficiency. In this paper, we report on an investigation regarding the effect of thermally ... -
Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
Tansel, Tunay; Kutluer, Kutlu; Salihoğlu, Ömer; Aydınlı, Atilla; Aslan, Bülent; Arıkan, Bülent; Turan, Raşit (IEEE-Inst Electrical Electronics Engineers Inc, 2012)The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ... -
Gibbs Free Energy Assisted Passivation Layers
Salihoğlu, Ömer; Tansel, Tunay; Hoştut, M.; Ergün, Y.; Aydınlı, Atilla (Spie-Int Soc Optical Engineering, 2016)Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ... -
High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers
Ergün, Yüksel; Hoştut, Mustafa; Tansel, Tunay; Muti, Abdullah; Kılıç, Abidin; Turan, Raşit; Aydınlı, Atilla (Spie-Int Soc Optical Engineering, 2013)We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ... -
IFVD-based large intermixing selectivity window process for high power laser diodes
Arslan, Seval; Şahin, Seval; Demir, Abdullah; Aydınlı, Atilla (Spie-Int Soc Optical Engineering, 2018)Catastrophic optical mirror damage (COMD) is a key issue in semiconductor lasers and it is initiated by facet heating because of optical absorption. To reduce optical absorption, the most promising method is to form ... -
Low dark current N structure superlattice MWIR photodetectors
Salihoğlu, Ömer; Muti, Abdullah; Turan, Raşit; Ergün, Yüksel; Aydınlı, Atilla (Spie-Int Soc Optical Engineering, 2014)Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R(0)A) which is directly related to dark current of the detector. Dark current arises ... -
N structure for type-II superlattice photodetectors
Salihoğlu, Ömer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Raşit; Ergün, Yüksel; Aydınlı, Atilla (Amer Inst Physics, 2012)In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption ...
