Yazar "Ergün, Y." için listeleme
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AlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlattices
Alyörük, M. Menderes; Ergün, Y.; Hoştut, M. (Walter De Gruyter GMBH, 2015)This study is based on the investigation of AlSb layer thickness effect on heavy-hole light-hole (HH-LH) splitting and band gap energies in a recently developed N-structure based on InAs/AlSb/GaSb type II superlattice ... -
Broadband asymmetric quantum-well infrared photodetector in Long-Wavelength Infrared Range (LWIR)
Hoştut, M.; Ergün, Y.; Sökmen, I. (2007)A theoretical investigation of a GaAs-AlGaAs infrared detector consisting of three asymmetric quantum wells is presented. Each quantum well is sensitive to yield absorption and a photoresponse at peak wavelengths of 8 µm, ... -
Electrical performance of InAs/AlSb/GaSb superlattice photodetectors
Tansel, Tunay; Hoştut, Mustafa; ElagÖz, S.; Kılıç, A.; Ergün, Y.; Aydınlı, A. (Academic Press LTD- Elsevier Science LTD, 2016)Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ... -
Fourier transform technique in variational treatment of two-electron parabolic quantum dot
Şakiroğlu, S.; Yıldız, A.; Doğan, Ue.; Akgüngor, K.; Epik, H.; Ergün, Y.; Sökmen, I. (IOP Publishing LTD, 2009)In this work, we propose an efficient method of reducing the computational effort of variational calculation with a Hylleraas-like trial wavefunction. The method consists of introducing integra transforms for the terms as ... -
Gibbs Free Energy Assisted Passivation Layers
Salihoğlu, Ömer; Tansel, Tunay; Hoştut, M.; Ergün, Y.; Aydınlı, Atilla (Spie-Int Soc Optical Engineering, 2016)Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ... -
I-V characterization of a quantum well infrared photodetector with stepped and graded barriers
Nutku, Ferhat; Erol, A.; Güneş, M.; Buklu, L. B.; Ergün, Y.; Arıkan, M. C. (Academic Press LTD- Elsevier Science LTD, 2012)I-V characterization of an n-type quantum well infrared photodetector which consists of stepped and graded barriers has been clone under dark at temperatures between 20-300 K. Different current transport mechanisms and ... -
The investigation of quantum efficiency constituents of InAs/AlSb/GaSb based N structure type-II SL photodetectors with InAlAs interface
Kılıç, A.; Tansel, Tunay; Hoştut, M.; ElagÖz, S.; Ergün, Y. (IOP Publishing LTD, 2018)We report on the optical properties of InAs/AlSb/GaSb based Type-II superlattice N-structure with p on n configuration. The detector structure is designed to operate in the mid wavelength infrared range with 50% cut-off ... -
Large hh-lh splitting energy for InAs/AlSb/GaSb based N-structure photodetectors
Akel, K.; Hoştut, Mustafa; Tansel, Tunay; Ergün, Y. (Amer Inst Physics, 2018)We investigate the band properties of InAs/AlSb/GaSb (N-structure) and InAs/GaSb material based type II superlattice (T2SL) photodedectors. The superlattice empirical pseudopotential method is used to define band-structures ... -
Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range
Kaya, U.; Hoştut, Mustafa; Kılıç, A.; Şakiroğlu, S.; Sökmen, I.; Ergün, Y.; Aydınlı, A. (Amer Inst Physics, 2013)In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n detector. Kronig-Penney and envelope function approximation is used to calculate band gap energy and superlattice minibands. ...
