Yazar "Hoştut, Mustafa" için listeleme
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Barrier lowering effect and dark current characteristics in asymmetric GaAs/AlGaAs multi quantum well structure
Altın, E.; Hoştut, Mustafa; Ergün, Yüksel (Springer, 2011)In this study, we investigate dark current voltage characteristics of GaAs/AlGaAs staircase-like asymmetric multiquantum well structure at various temperatures experimentally. The activation energy is calculated by using ... -
Broadband staircase quantum well infrared photodetector with low dark current
Ergün, Yüksel; Hoştut, Mustafa; Eker, Süleyman Umut; Sökmen, İsmail (Elsevier Science BV, 2006)We present a theoretical investigation of a novel staircase-like quantum well infrared photodetector (QWIP). It detects wavelengths between 8.8 mu m and 12.3 mu m at an applied electric field of F= 6 x 10(4) V/cm at room ... -
Broadband staircase quantum well infrared photodetector: working in long wavelength infrared range (LWIR)
Hoştut, Mustafa; Kartal, D.; Ergün, Yüksel; Sökmen, İsmail (Wiley-V C H Verlag GMBH, 2007)We present a theoretical investigation of a staircase-like quantum well infrared photodetector (QWIP). it detects wavelength between 7.6 mu m and 13.5 mu m range at an applied electric field of F = 1.9x10(4) V/cm at 77 K. ... -
Dark current and optical properties in asymmetric GaAs/AlGaAs staircase-like multiquantum well structure
Altın, E.; Hoştut, Mustafa; Ergün, Yüksel (Elsevier Science BV, 2013)In this study, we investigate dark current voltage characteristics of GaAs/AlGaAs staircase-like asymmetric multiquantum well structure at various temperatures experimentally. Measured dark current density voltage (J(d)-V) ... -
Electrical and optical performances with extracted minority carrier lifetimes of InAs/GaSb SL photodetector operating in the mid wavelength infrared range
Tansel, Tunay; Hoştut, Mustafa; Ergün, Yüksel (Academic Press LTD- Elsevier Science LTD, 2017)We report a study on the temperature dependence of electrical and optical performance of InAs/GaSb based type-II superlattice (T2SL) pin photodetectors in the mid wavelength infrared range (MWIR). The SL structure exhibits ... -
Electrical performance of InAs/AlSb/GaSb superlattice photodetectors
Tansel, Tunay; Hoştut, Mustafa; ElagÖz, S.; Kılıç, A.; Ergün, Y.; Aydınlı, A. (Academic Press LTD- Elsevier Science LTD, 2016)Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ... -
Electronic and optical properties of 4.2 mu m"N" structured superlattice MWIR photodetectors
Salihoğlu, Ömer; Hoştut, Mustafa; Tansel, Tunay; Kutluer, K.; Kılıç, A.; Alyörük, M.; Aydınlı, A. (Elsevier Science BV, 2013)We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ... -
High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers
Ergün, Yüksel; Hoştut, Mustafa; Tansel, Tunay; Muti, Abdullah; Kılıç, Abidin; Turan, Raşit; Aydınlı, Atilla (Spie-Int Soc Optical Engineering, 2013)We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ... -
Intersubband electron transition across a staircase potential containing quantum wells: light emission
Ergün, Yüksel; Hoştut, Mustafa; Eker, Süleyman Umut; Sökmen, İsmail (Academic Press LTD Elsevier Science LTD, 2005)We present a theoretical investigation of a novel staircase-like light emitter based on the GaAs/GaxAl1-xAs material system. The emission wavelength is around 12 mum. The device operation is based on the intersubband ... -
Large hh-lh splitting energy for InAs/AlSb/GaSb based N-structure photodetectors
Akel, K.; Hoştut, Mustafa; Tansel, Tunay; Ergün, Y. (Amer Inst Physics, 2018)We investigate the band properties of InAs/AlSb/GaSb (N-structure) and InAs/GaSb material based type II superlattice (T2SL) photodedectors. The superlattice empirical pseudopotential method is used to define band-structures ... -
A new approach to quantum well infrared photodetectors: Staircase-like quantum well and barriers
Eker, Süleyman Umut; Hoştut, Mustafa; Ergün, Yüksel; Sökmen, İsmail (Elsevier Science BV, 2006)We present a theoretical investigation of a novel staircase-like quantum well infrared photodetector (QWIP). The proposed structure makes use of quantum wells and barriers with increasing Al content both in the wells and ... -
Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range
Kaya, U.; Hoştut, Mustafa; Kılıç, A.; Şakiroğlu, S.; Sökmen, I.; Ergün, Y.; Aydınlı, A. (Amer Inst Physics, 2013)In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n detector. Kronig-Penney and envelope function approximation is used to calculate band gap energy and superlattice minibands. ... -
Three-color broadband asymmetric quantum well infrared photodetectors in long wavelength infrared range (LWIR)
Hoştut, Mustafa; Alyörük, M.; Ergün, Yüksel; Sökmen, İsmail (Springer, 2010)A theoretical investigation of a GaAs/AlGaAs-material-system-based four quantum well infrared detector structures consisting of ten periods of three asymmetric quantum well units are presented. Each quantum well in the ... -
Tunable long-wavelength broad band asymmetric quantum well infrared photodetector
Hoştut, Mustafa; Kartal, D.; Ergün, Yüksel; Sökmen, İsmail (IOP Publishing LTD, 2007)We present a theoretical investigation of a GaAs/AlGaAs infrared detector consisting of three asymmetric quantum wells. Each well is designed to yield absorption and a photoresponse at peak wavelengths of 8.2 mu m, 9.5 mu ...
