Yazar "Lisesivdin, Sefer Bora" için listeleme
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Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs
Çelik, Özlem; Tıraş, Engin; Ardalı, Şükrü; Lisesivdin, Sefer Bora; Özbay Ekmel (Wiley-V C H Verlag GMBH, 2011)Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained ... -
Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN
Çelik, Özlem; Tıraş, Engin; Ardalı, Şükrü; Lisesivdin, Sefer Bora; Özbay Ekmel (De Gruyter Open LTD, 2012)The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect ... -
Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
Atmaca, G.; Ardalı, Şükrü; Narin, P.; Kutlu, E.; Lisesivdin, Sefer Bora; Malin, T.; Tıraş, Engin (Elsevier Science Sa, 2016)In this study, energy relaxation mechanisms of electrons in AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT) structures with and without in situ Si3N4 passivation were investigated. Although the physical parameters ... -
SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer
Arslan, Engin; Cakmakyapan, Semih; Kazar, Özgür; Butun, Serkan; Lisesivdin, Sefer Bora; Cinel, Neval A.; Özbay Ekmel (Korean Inst Metals Materials, 2014)Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG ... -
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
Tıraş, Engin; Çelik, Özlem; Mutlu, Selman; Ardalı, Şükrü; Lisesivdin, Sefer Bora; Özbay Ekmel (Academic Press LTD- Elsevier Science LTD, 2012)The two-dimensional (2D) electron energy relaxation in Al0.25Ga0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ...
