Yazar "Salihoğlu, Ömer" için listeleme
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Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
Tansel, Tunay; Kutluer, Kutlu; Salihoğlu, Ömer; Aydınlı, Atilla; Aslan, Bülent; Arıkan, Bülent; Turan, Raşit (IEEE-Inst Electrical Electronics Engineers Inc, 2012)The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ... -
Electronic and optical properties of 4.2 mu m"N" structured superlattice MWIR photodetectors
Salihoğlu, Ömer; Hoştut, Mustafa; Tansel, Tunay; Kutluer, K.; Kılıç, A.; Alyörük, M.; Aydınlı, A. (Elsevier Science BV, 2013)We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ... -
Gibbs Free Energy Assisted Passivation Layers
Salihoğlu, Ömer; Tansel, Tunay; Hoştut, M.; Ergün, Y.; Aydınlı, Atilla (Spie-Int Soc Optical Engineering, 2016)Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ... -
Low dark current N structure superlattice MWIR photodetectors
Salihoğlu, Ömer; Muti, Abdullah; Turan, Raşit; Ergün, Yüksel; Aydınlı, Atilla (Spie-Int Soc Optical Engineering, 2014)Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R(0)A) which is directly related to dark current of the detector. Dark current arises ... -
N structure for type-II superlattice photodetectors
Salihoğlu, Ömer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Raşit; Ergün, Yüksel; Aydınlı, Atilla (Amer Inst Physics, 2012)In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption ...
