Yazar "Tansel, Tunay" için listeleme
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Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
Tansel, Tunay; Kutluer, Kutlu; Salihoğlu, Ömer; Aydınlı, Atilla; Aslan, Bülent; Arıkan, Bülent; Turan, Raşit (IEEE-Inst Electrical Electronics Engineers Inc, 2012)The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ... -
Electrical and optical performance of InAs / AlSb / GaSb superlattice photodetector
Hoştut, M.; Tansel, Tunay; Ergün, Yüksel; Kılıç, A.; Aydınlı, A. (TANGER Ltd., 2015)We report on electrical and optical performance of InAs/AlSb/GaSb type-II superlattice photodetectors. The detector structure is designed to operate in the MWIR domain with a cut-off wavelength of 4.3 µm at 125 K. The ... -
Electrical and optical performances with extracted minority carrier lifetimes of InAs/GaSb SL photodetector operating in the mid wavelength infrared range
Tansel, Tunay; Hoştut, Mustafa; Ergün, Yüksel (Academic Press LTD- Elsevier Science LTD, 2017)We report a study on the temperature dependence of electrical and optical performance of InAs/GaSb based type-II superlattice (T2SL) pin photodetectors in the mid wavelength infrared range (MWIR). The SL structure exhibits ... -
Electrical performance of InAs/AlSb/GaSb superlattice photodetectors
Tansel, Tunay; Hoştut, Mustafa; ElagÖz, S.; Kılıç, A.; Ergün, Y.; Aydınlı, A. (Academic Press LTD- Elsevier Science LTD, 2016)Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ... -
Electronic and optical properties of 4.2 mu m"N" structured superlattice MWIR photodetectors
Salihoğlu, Ömer; Hoştut, Mustafa; Tansel, Tunay; Kutluer, K.; Kılıç, A.; Alyörük, M.; Aydınlı, A. (Elsevier Science BV, 2013)We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ... -
Gibbs Free Energy Assisted Passivation Layers
Salihoğlu, Ömer; Tansel, Tunay; Hoştut, M.; Ergün, Y.; Aydınlı, Atilla (Spie-Int Soc Optical Engineering, 2016)Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ... -
High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers
Ergün, Yüksel; Hoştut, Mustafa; Tansel, Tunay; Muti, Abdullah; Kılıç, Abidin; Turan, Raşit; Aydınlı, Atilla (Spie-Int Soc Optical Engineering, 2013)We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ... -
The investigation of quantum efficiency constituents of InAs/AlSb/GaSb based N structure type-II SL photodetectors with InAlAs interface
Kılıç, A.; Tansel, Tunay; Hoştut, M.; ElagÖz, S.; Ergün, Y. (IOP Publishing LTD, 2018)We report on the optical properties of InAs/AlSb/GaSb based Type-II superlattice N-structure with p on n configuration. The detector structure is designed to operate in the mid wavelength infrared range with 50% cut-off ... -
Large hh-lh splitting energy for InAs/AlSb/GaSb based N-structure photodetectors
Akel, K.; Hoştut, Mustafa; Tansel, Tunay; Ergün, Y. (Amer Inst Physics, 2018)We investigate the band properties of InAs/AlSb/GaSb (N-structure) and InAs/GaSb material based type II superlattice (T2SL) photodedectors. The superlattice empirical pseudopotential method is used to define band-structures ... -
N structure for type-II superlattice photodetectors
Salihoğlu, Ömer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Raşit; Ergün, Yüksel; Aydınlı, Atilla (Amer Inst Physics, 2012)In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption ... -
N-structure based on InAs/AlSb/GaSb superlattice photodetectors
Hoştut, M.; Alyörük, M.; Tansel, Tunay; Kılıç, A.; Turan, Raşit; Aydınlı, A.; Ergün, Yüksel (Academic Press LTD- Elsevier Science LTD, 2015)We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies ...
