Yazar "Turan, Raşit" için listeleme
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An Alternative Metal-Assisted Etching Route for Texturing Silicon Wafers for Solar Cell Applications
Es, Fırat; Kulakçı, Mustafa; Turan, Raşit (IEEE-Inst Electrical Electronics Engineers Inc, 2016)Metal-assisted etching (MAE) can be used to form antireflective and light-trapping structures on crystalline silicon solar cells. This method has been widely used to form nanowires and nanoholes on their surfaces. In this ... -
Effect of Au on the crystallization of germanium thin films by electron-beam evaporation
Eygi, Zeynep Deniz; Kulakçı, Mustafa; Turan, Raşit (Elsevier Science BV, 2014)Metal induced crystallization is a widely used method to form crystalline/polycrystalline structures at low temperatures. In this work, Au was applied to enhance the crystallization of amorphous Ge films. Ge films with ... -
Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
Tansel, Tunay; Kutluer, Kutlu; Salihoğlu, Ömer; Aydınlı, Atilla; Aslan, Bülent; Arıkan, Bülent; Turan, Raşit (IEEE-Inst Electrical Electronics Engineers Inc, 2012)The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ... -
Effects of gold-induced crystallization process on the structural and electrical properties of germanium thin films
Kabaçelik, İsmail; Kulakçı, Mustafa; Turan, Raşit; Ünal, Nuri (Wiley, 2018)Gold-induced (Au-) crystallization of amorphous germanium (-Ge) thin films was investigated by depositing Ge on aluminum-doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The ... -
High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers
Ergün, Yüksel; Hoştut, Mustafa; Tansel, Tunay; Muti, Abdullah; Kılıç, Abidin; Turan, Raşit; Aydınlı, Atilla (Spie-Int Soc Optical Engineering, 2013)We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ... -
Investigation of silver-induced crystallization of germanium thin films fabricated on different substrates
Kabaçelik, İsmail; Kulakçı, Mustafa; Turan, Raşit (Elsevier Science BV, 2015)Silver-induced crystallizations of amorphous germanium (alpha-Ge) thin films were fabricated through electron beam evaporation on crystalline silicon (c-Si) (100), aluminum-doped zinc oxide (AZO), and glass substrates at ... -
Low dark current N structure superlattice MWIR photodetectors
Salihoğlu, Ömer; Muti, Abdullah; Turan, Raşit; Ergün, Yüksel; Aydınlı, Atilla (Spie-Int Soc Optical Engineering, 2014)Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R(0)A) which is directly related to dark current of the detector. Dark current arises ... -
Metal-assisted nano-textured solar cells with SiO2/Si3N4 passivation
Es, Fırat; Baytemir, Gülsen; Kulakcı, Mustafa; Turan, Raşit (Elsevier Science BV, 2017)We demonstrate the fabrication of nano-sized surface textured crystalline silicon by a metal-assisted electroless etching method with nitric acid added as the hole injection agent. This method generates randomly shaped ... -
Multi-crystalline silicon solar cells with metal-assisted nano-texturing using HNO3 as hole injection agent
Es, Fırat; Baytemir, Gülsen; Kulakçı, Mustafa; Turan, Raşit (Wiley-V C H Verlag GMBH, 2016)In this study, metal-assisted etching (MAE) with nitric acid (HNO3) as a hole injecting agent has been employed to texture multi-crystalline silicon wafers. It was previously proven that addition of HNO3 enabled control ... -
N structure for type-II superlattice photodetectors
Salihoğlu, Ömer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Raşit; Ergün, Yüksel; Aydınlı, Atilla (Amer Inst Physics, 2012)In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption ... -
N-structure based on InAs/AlSb/GaSb superlattice photodetectors
Hoştut, M.; Alyörük, M.; Tansel, Tunay; Kılıç, A.; Turan, Raşit; Aydınlı, A.; Ergün, Yüksel (Academic Press LTD- Elsevier Science LTD, 2015)We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies ... -
Performance of solar cells fabricated on black multicrystalline Si by nanowire decoration
Es, Fırat; Çiftpinar, Emine Hande; Demircioğlu, Olgu; Gunoven, Mete; Kulakçı, Mustafa; Turan, Raşit (Elsevier Science BV, 2015)Vertically aligned Si nanowire (NW) arrays fabricated by metal-assisted etching technique were applied to industrial sized (156 mm x 156 mm) multicrystalline Si cells as an anti-reflective (AR) medium. The NW lengths ... -
The quantum confined Stark effect in silicon nanocrystals
Kulakçı, Mustafa; Serincan, Uğur; Turan, Raşit; Finstad, Terje G. (IOP Publishing LTD, 2008)The quantum confined Stark effect (QCSE) in Si nanocrystals embedded in a SiO(2) matrix is demonstrated by photoluminescence (PL) spectroscopy at room and cryogenic temperatures. It is shown that the PL peak position shifts ... -
Structural and electrical analysis of poly-Ge films fabricated by e-beam evaporation for optoelectronic applications
Kabaçelik, İsmail; Kulakçı, Mustafa; Turan, Raşit (Elsevier Sci LTD, 2016)We have investigated the relationship between structural and electrical properties of Ge thin films deposited on single crystal silicon (100) substrates by electron beam evaporation at room temperature. Post-thermal annealing ... -
Structural and optical properties of porous nanocrystalline Ge
Nanocrystalline Ge films were prepared by isotropic chemical etching on single-crystalline Ge substrates with 100 and 111 orientations. The structural and optical properties have been investigated by transmission electron ... -
Variation of photoluminescence from Si nanostructures in SiO2 matrix with Si+ post implantation
Serincan, Uğur; Kulakçı, M.; Turan, Raşit; Foss, S.; Finstad, T. G. (2007)Si nanoclusters were formed by 28Si ion implantation into SiO2 matrix and subsequently annealed at 1050 °C for 2 h under N2 ambient. The photoluminescence (PL) characteristics depend on the 28Si fluence. The PL signals ...
