Kurum Yazarı "Tıraş, Engin" Fizik Bölümü İçin Listeleme
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Power-loss mechanisms in surface passivated AlGaN/AlN/GaN heterojunctions
Tıraş, Engin; Atmaca, G.; Lisesivdin, S. B.; Ardalı, Şükrü; Malin, T.; Mansurov, V.; Zhuravlev, K. (Institute of Electrical and Electronics Engineers Inc., 2016)The surface passivation effect on the power-loss mechanisms in AlGaN/AlN/GaN heterostructures was investigated. The electron temperatures of hot electrons was obtained from the temperature and the applied electric field ... -
Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells
Tıraş, Engin; Balkan, Naci; Ardalı, Şükrü; Güneş, M.; Fontaine, C.; Arnoult, A. (Taylor & Francis LTD, 2011)Electronic transport in n-and p-type modulation-doped Ga0.7In0.3N0.015As0.985/GaAs quantum wells are investigated using magneto-transport measurements in the temperature range between T = 1.8 and 32K and at magnetic fields ... -
Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer
Atmaca, G.; Ardalı, Şükrü; Tıraş, Engin; Malin, T.; Mansurov, V. G.; Zhuravlev, K. S.; Lisesivdin, S. B. (Pergamon-Elsevier Science LTD, 2016)The scattering mechanisms limiting mobility for low-dimensional charge carriers in a two-dimensional electron gas (2DEG) in undoped and doped AlGaN/AlN/GaN heterostructures with and without Si3N4 passivation are investigated. ... -
Superconductivity in heavily compensated Mg-doped InN
Tıraş, Engin; Güneş, M.; Balkan, Naci; Airey, R.; Schaff, W. J. (Amer Inst Physics, 2009)We report superconductivity in Mg-doped InN grown by molecular beam epitaxy. Superconductivity phase transition temperature occurs T-c=3.97 K as determined by magnetoresistance and Hall resistance measurements. The ... -
Superconductivity in MBE grown InN
Güneş, M.; Balkan, Naci; Tıraş, Engin; Ardalı, Şükrü; Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, A. (Wiley-V C H Verlag GMBH, 2011)We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82K, for an 1080 nm InN ... -
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
Tıraş, Engin; Çelik, Özlem; Mutlu, Selman; Ardalı, Şükrü; Lisesivdin, Sefer Bora; Özbay Ekmel (Academic Press LTD- Elsevier Science LTD, 2012)The two-dimensional (2D) electron energy relaxation in Al0.25Ga0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ... -
Thermally activated flux mechanism in Mg-doped InN epitaxial film
Güneş, Mustafa; Akyol, Mustafa; Ekicibil, Ahmet; Tıraş, Engin (Taylor & Francis LTD, 2017)The superconducting behaviour of InN has been observed in many experiments where the origin of superconductivity is addressed to presence of (i) In-In chains in ab-plane, (ii) specific carrier density range limited Mott ... -
The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene
Arslan, Engin; Ardalı, Şükrü; Tıraş, Engin; Cakmakyapan, Semih; Özbay Ekmel (Taylor & Francis LTD, 2017)The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on an SiO2/Si substrate have been investigated using the Shubnikov-de Haas (SdH) oscillations technique. ... -
The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation
Ardalı, Şükrü; Atmaca, G.; Lisesivdin, S. B.; Malin, T.; Mansurov, V.; Zhuravlev, K.; Tıraş, Engin (Wiley-V C H Verlag GMBH, 2015)The effects of surface passivation effect on electron mobility and crystal structure in Al0.3Ga0.7N/AlN/GaN heterostructures are investigated by classical Hall effect measurements and an X-ray diffraction method. ...