Yazar "Özbay Ekmel" için Makale Koleksiyonu listeleme
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Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD
Arslan, Engin; Öztürk, Mustafa K.; Tıraş, Engin; Tıraş, Tülay; Özçelik, Süleyman; Özbay Ekmel (Springer, 2017)High-resistive GaN (> 10(8) a"broken vertical bar cm) layers have been grown with different buffer structures on 6H-SiC substrate using metalorganic chemical vapor deposition reactor. Different combination of the GaN/AlN ... -
Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN
Çelik, Özlem; Tıraş, Engin; Ardalı, Şükrü; Lisesivdin, Sefer Bora; Özbay Ekmel (De Gruyter Open LTD, 2012)The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect ... -
SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer
Arslan, Engin; Cakmakyapan, Semih; Kazar, Özgür; Butun, Serkan; Lisesivdin, Sefer Bora; Cinel, Neval A.; Özbay Ekmel (Korean Inst Metals Materials, 2014)Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG ... -
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
Tıraş, Engin; Çelik, Özlem; Mutlu, Selman; Ardalı, Şükrü; Lisesivdin, Sefer Bora; Özbay Ekmel (Academic Press LTD- Elsevier Science LTD, 2012)The two-dimensional (2D) electron energy relaxation in Al0.25Ga0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ... -
The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene
Arslan, Engin; Ardalı, Şükrü; Tıraş, Engin; Cakmakyapan, Semih; Özbay Ekmel (Taylor & Francis LTD, 2017)The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on an SiO2/Si substrate have been investigated using the Shubnikov-de Haas (SdH) oscillations technique. ...