Yazar "Turan, Raşit" için Makale Koleksiyonu listeleme
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An Alternative Metal-Assisted Etching Route for Texturing Silicon Wafers for Solar Cell Applications
Es, Fırat; Kulakçı, Mustafa; Turan, Raşit (IEEE-Inst Electrical Electronics Engineers Inc, 2016)Metal-assisted etching (MAE) can be used to form antireflective and light-trapping structures on crystalline silicon solar cells. This method has been widely used to form nanowires and nanoholes on their surfaces. In this ... -
Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
Tansel, Tunay; Kutluer, Kutlu; Salihoğlu, Ömer; Aydınlı, Atilla; Aslan, Bülent; Arıkan, Bülent; Turan, Raşit (IEEE-Inst Electrical Electronics Engineers Inc, 2012)The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ... -
Metal-assisted nano-textured solar cells with SiO2/Si3N4 passivation
Es, Fırat; Baytemir, Gülsen; Kulakcı, Mustafa; Turan, Raşit (Elsevier Science BV, 2017)We demonstrate the fabrication of nano-sized surface textured crystalline silicon by a metal-assisted electroless etching method with nitric acid added as the hole injection agent. This method generates randomly shaped ... -
Multi-crystalline silicon solar cells with metal-assisted nano-texturing using HNO3 as hole injection agent
Es, Fırat; Baytemir, Gülsen; Kulakçı, Mustafa; Turan, Raşit (Wiley-V C H Verlag GMBH, 2016)In this study, metal-assisted etching (MAE) with nitric acid (HNO3) as a hole injecting agent has been employed to texture multi-crystalline silicon wafers. It was previously proven that addition of HNO3 enabled control ... -
N structure for type-II superlattice photodetectors
Salihoğlu, Ömer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Raşit; Ergün, Yüksel; Aydınlı, Atilla (Amer Inst Physics, 2012)In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption ... -
N-structure based on InAs/AlSb/GaSb superlattice photodetectors
Hoştut, M.; Alyörük, M.; Tansel, Tunay; Kılıç, A.; Turan, Raşit; Aydınlı, A.; Ergün, Yüksel (Academic Press LTD- Elsevier Science LTD, 2015)We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies ... -
Performance of solar cells fabricated on black multicrystalline Si by nanowire decoration
Es, Fırat; Çiftpinar, Emine Hande; Demircioğlu, Olgu; Gunoven, Mete; Kulakçı, Mustafa; Turan, Raşit (Elsevier Science BV, 2015)Vertically aligned Si nanowire (NW) arrays fabricated by metal-assisted etching technique were applied to industrial sized (156 mm x 156 mm) multicrystalline Si cells as an anti-reflective (AR) medium. The NW lengths ... -
The quantum confined Stark effect in silicon nanocrystals
Kulakçı, Mustafa; Serincan, Uğur; Turan, Raşit; Finstad, Terje G. (IOP Publishing LTD, 2008)The quantum confined Stark effect (QCSE) in Si nanocrystals embedded in a SiO(2) matrix is demonstrated by photoluminescence (PL) spectroscopy at room and cryogenic temperatures. It is shown that the PL peak position shifts ... -
Structural and optical properties of porous nanocrystalline Ge
Nanocrystalline Ge films were prepared by isotropic chemical etching on single-crystalline Ge substrates with 100 and 111 orientations. The structural and optical properties have been investigated by transmission electron ... -
Variation of photoluminescence from Si nanostructures in SiO2 matrix with Si+ post implantation
Serincan, Uğur; Kulakçı, M.; Turan, Raşit; Foss, S.; Finstad, T. G. (2007)Si nanoclusters were formed by 28Si ion implantation into SiO2 matrix and subsequently annealed at 1050 °C for 2 h under N2 ambient. The photoluminescence (PL) characteristics depend on the 28Si fluence. The PL signals ...