Güncel Gönderiler: Makale Koleksiyonu
Toplam kayıt 1058, listelenen: 381-400
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alpha-In2S3 and beta-In2S3 phases produced by SILAR technique
(Taylor & Francis LTD, 2012)In2S3 films have been deposited by the successive ionic adsorption and reaction technique (SILAR) at room temperature. The films have been examined to evaluate the structural and optical properties. X-ray diffraction spectra ... -
Synthesis, characterization, tautomerism and theoretical study of some new Schiff base derivatives
(Pergamon-Elsevier Science LTD, 2011)New Schiff base derivatives were prepared by the condensation of 5-chloro and 5-bromo salicylaldehyde with bis(o-aminophenol)ethers. Five bis(o-nitrophenol)ether compounds were synthesized using some ditosylate, ... -
Effect of fatigue on fracture toughness and phase transformation of Y-TZP ceramics by X-ray diffraction and Raman spectroscopy
(Wiley-Blackwell, 2012)The aim of this study was to evaluate the effect of fatigue on fracture toughness and phase transformation of yttria-stabilized zirconia polycrystal materials (Cercon and Lava). The specimens were tested for indentation ... -
Biaxial flexural strength and phase transformation of Ce-TZP/Al2O3 and Y-TZP core materials after thermocycling and mechanical loading
(Korean Acad Prosthodontics, 2014)PURPOSE. The purpose of the present study was to evaluate the effect of thermocycling and mechanical loading on the biaxial flexural strength and the phase transformation of one Ce-TZP/Al203and two Y-TZP core materials. ... -
Octonic Form of Proca-Maxwell's Equations and Relativistic Derivation of Electromagnetism
(Springer/Plenum Publishers, 2013)We propose to write the Proca-Maxwell's equations, Klein-Gordon equation and electromagnetic energy conservation with magnetic monopole in terms of a new algebraic structure named as octon. The Lorentz transformations of ... -
Structural and optical properties of SnS semiconductor films produced by chemical bath deposition
(IOP Publishing LTD, 2009)SnS films have been deposited at room temperature by the chemical bath deposition technique. The films have been examined to evaluate their structure, morphology, composition and optical properties. SnS films were ... -
Effect of fatigue on biaxial flexural strength of bilayered porcelain/zirconia (Y-TZP) dental ceramics
(Elsevier Sci LTD, 2011)Objectives. The aim of this study was to evaluate the effect of fatigue on biaxial flexural strength of bilayered disks of two Y-TZP cores. Methods. Twenty bilayered veneer/zirconia disks were fabricated from each material ... -
Thermally activated flux mechanism in Mg-doped InN epitaxial film
(Taylor & Francis LTD, 2017)The superconducting behaviour of InN has been observed in many experiments where the origin of superconductivity is addressed to presence of (i) In-In chains in ab-plane, (ii) specific carrier density range limited Mott ... -
Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD
(Springer, 2017)High-resistive GaN (> 10(8) a"broken vertical bar cm) layers have been grown with different buffer structures on 6H-SiC substrate using metalorganic chemical vapor deposition reactor. Different combination of the GaN/AlN ... -
Power Loss Mechanisms in Indium-Rich InGaN Samples
(Springer, 2016)Molecular beam epitaxy-grown InxGa1-xN/GaN samples with indium fraction x ranging between 0.44 and 0.784 were studied by pulsed current-voltage (I-V) measurements at 1.7 K. The drift velocity, electron mobility, and ... -
Electron and hole energy relaxation rates in GaInNAs/GaAs quantum wells via deformation potential and piezoelectric scattering
(Wiley-V C H Verlag GMBH, 2013)The two-dimensional (2D) electron and hole energy relaxation associated with acoustic phonon emission in n- and p-type modulation doped Ga0.7In0.3NyAs1y/GaAs quantum wells has been investigated experimentally using ... -
Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: evidence for p-type conductivity
(Springer, 2012)We report on the Mg-doped, indium-rich Ga (x) In1-x N (x < 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of ... -
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
(Academic Press LTD- Elsevier Science LTD, 2012)The two-dimensional (2D) electron energy relaxation in Al0.25Ga0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ... -
Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3 mu m operation
(Elsevier Science BV, 2012)The high resistivity that is encountered in p-type DBRs is an important problem in vertical cavity surface emitting lasers and optical amplifiers (VCSELs and VCSOAs). This is because the formation of potential barriers at ... -
Superconductivity in heavily compensated Mg-doped InN
(Amer Inst Physics, 2009)We report superconductivity in Mg-doped InN grown by molecular beam epitaxy. Superconductivity phase transition temperature occurs T-c=3.97 K as determined by magnetoresistance and Hall resistance measurements. The ... -
In rich In1-xGaxN: Composition dependence of longitudinal optical phonon energy
(Wiley-Blackwell, 2010)The composition dependence of longitudinal optical (LO) phonon energies in undoped and Mg-doped In1-xGaxN samples are determined using Raman spectroscopy in the range of Ga fraction from x = 0 to x = 56%. The LO phonon ... -
Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells
(Taylor & Francis LTD, 2011)Electronic transport in n-and p-type modulation-doped Ga0.7In0.3N0.015As0.985/GaAs quantum wells are investigated using magneto-transport measurements in the temperature range between T = 1.8 and 32K and at magnetic fields ... -
Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra
(Wiley-V C H Verlag GMBH, 2012)The vibrational properties of InN samples grown by molecular beam epitaxy (MBE) technique have been studied using infrared (IR) and Raman scattering spectroscopy at room temperature. In the Raman measurements, the 532?nm ... -
Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures
(Springer, 2012)The two-dimensional (2D) electron energy relaxation in Al0.83In0.17N/AlN/GaN heterostructures has been investigated experimentally. Shubnikov-de Haas (SdH) effect measurements were employed in the investigations. The ... -
Contactless electron effective mass determination in GaInNAs/GaAs quantum wells
(Springer, 2013)The electron effective masses in n-type modulation doped Ga0.7In0.3NyAs1-y/GaAs quantum wells with nitrogen mole fractions of y = 0.004 and 0.010 were investigated experimentally. Two experimental techniques: magnetic field ...
