Kurum Yazarı "Ardalı, Şükrü" Bildiri Koleksiyonu İçin Listeleme
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Determination of dislocation densities in InN
Ardalı, Şükrü; Tıraş, Engin; Güneş, Mustafa; Balkan, Naci; Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros (Wiley-V C H Verlag GMBH, 2012)The magneto-transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. ... -
Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs
Çelik, Özlem; Tıraş, Engin; Ardalı, Şükrü; Lisesivdin, Sefer Bora; Özbay Ekmel (Wiley-V C H Verlag GMBH, 2011)Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained ... -
Longitudinal polar optical phonons in InN/GaN single and double heterostructures
Ardalı, Şükrü; Tıraş, Engin; Güneş, Mustafa; Balkan, Naci; Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros (Wiley-V C H Verlag GMBH, 2011)Longitudinal optical phonon energy in InN epi-layers has been determined independently from the Raman spectroscopy and temperature dependent Hall mobility measurements. Raman spectroscopy technique can be used to obtain ... -
Power-loss mechanisms in surface passivated AlGaN/AlN/GaN heterojunctions
Tıraş, Engin; Atmaca, G.; Lisesivdin, S. B.; Ardalı, Şükrü; Malin, T.; Mansurov, V.; Zhuravlev, K. (Institute of Electrical and Electronics Engineers Inc., 2016)The surface passivation effect on the power-loss mechanisms in AlGaN/AlN/GaN heterostructures was investigated. The electron temperatures of hot electrons was obtained from the temperature and the applied electric field ... -
Superconductivity in MBE grown InN
Güneş, M.; Balkan, Naci; Tıraş, Engin; Ardalı, Şükrü; Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, A. (Wiley-V C H Verlag GMBH, 2011)We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82K, for an 1080 nm InN ...