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Band gap energies of CdO : F semiconductor films produced by ultrasonic spray pyrolysis method
(Amer Inst Physics, 2007)
The fluorine doped cadmium oxide (CdO:F) samples have been deposited by ultrasonic spray pyrolysis method (USP). The absorption spectra of the samples showed that CdO:F is a direct band gap material. The direct optical ...
Some structural properties of CdO : F films produced by ultrasonic spray pyrolysis method
(Elsevier Science Sa, 2007)
The fluorine doped cadmium oxide (CdO:F) samples have been deposited at 250 degrees C by ultrasonic spray pyrolysis method. Cadmiumacetatdihydrat and ammonium fluoride have been taken as a source of cadmium and fluorine-dopant ...
Optical properties of CdxZn((1-x))O films deposited by ultrasonic spray pyrolysis method
(Elsevier Science Sa, 2007)
CdxZn(1-x)O (x=0, 0.59, 0.78 and 1) films have been produced by ultrasonic spray pyrolysis technique using aqueous solutions of CdCl2 H2O and ZnCl2 on the microscope glass substrate between 325 and 400 degrees C. The ...
Band gap energies of CdO:F semiconductor films produced by ultrasonic spray pyrolysis method
(2007)
The fluorine doped cadmium oxide (CdO:F) samples have been deposited by ultrasonic spray pyrolysis method (USP). The absorption spectra of the samples showed that CdO:F is a direct band gap material. The direct optical ...