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dc.contributor.authorÇağlar, Yasemin
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorIlıcan, Saliha
dc.contributor.authorÇağlar, Müjdat
dc.date.accessioned2019-10-20T09:03:04Z
dc.date.available2019-10-20T09:03:04Z
dc.date.issued2008
dc.identifier.issn1454-4164
dc.identifier.urihttps://hdl.handle.net/11421/16617
dc.descriptionWOS: 000260520900018en_US
dc.description.abstractThe electrical characterization of IZO/FSS/Al diode has been investigated current-voltage method. The ideality factor of the diode was found to be 2.84, which confirm that the IZO/FSS/Al device indicates a non-ideal I-V behaviour. The effect of series resistance was evaluated using a method developed by Cheung. The R-s and n values were determined from the dV/dln(I)-I plot and were found to be 8.00 k Omega and 2.84, respectively. The barrier height and R. values were calculated from H(I)-I plot and were found to be 0.86 eV and 7.83 k Omega At higher voltages, I-V characteristics of the diode are affected by the electrical properties. This suggests that at higher voltages, the current flow in the diode is controlled by the space limited current mechanism.en_US
dc.language.isoengen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectInorganic/Organic Semiconductor Diodeen_US
dc.subjectSeries Resistanceen_US
dc.titleElectrical characterization of ZnO/organic semiconductor diodeen_US
dc.typearticleen_US
dc.relation.journalJournal of Optoelectronics and Advanced Materialsen_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume10en_US
dc.identifier.issue10en_US
dc.identifier.startpage2584en_US
dc.identifier.endpage2587en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorÇağlar, Yasemin
dc.contributor.institutionauthorIlıcan, Saliha
dc.contributor.institutionauthorÇağlar, Müjdat


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