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dc.contributor.authorSalihoğlu, Ömer
dc.contributor.authorMuti, Abdullah
dc.contributor.authorKutluer, Kutlu
dc.contributor.authorTansel, Tunay
dc.contributor.authorTuran, Raşit
dc.contributor.authorErgün, Yüksel
dc.contributor.authorAydınlı, Atilla
dc.date.accessioned2019-10-20T09:13:17Z
dc.date.available2019-10-20T09:13:17Z
dc.date.issued2012
dc.identifier.issn0003-6951
dc.identifier.urihttps://dx.doi.org/10.1063/1.4745841
dc.identifier.urihttps://hdl.handle.net/11421/16801
dc.descriptionWOS: 000308263100074en_US
dc.description.abstractIn the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption by manipulating electron and hole wavefunctions that are spatially separated in T2SLs, increasing the absorption while decreasing the dark current. In order to engineer the wavefunctions, we introduce a thin AlSb layer between InAs and GaSb layers in the growth direction which also acts as a unipolar electron barrier. Unlike the symmetrical insertion of AlSb into GaSb layers, N design aims to exploit the shifting of the electron and hole wavefunctions under reverse bias. With cutoff wavelength of 4.3 mu m at 77 K, temperature dependent dark current and detectivity measurements show that the dark current density is 3.6 x 10(-9) A/cm(2), under zero bias. Photodetector reaches background limited infrared photodetection (BLIP) condition at 125 K with the BLIP detectivity (D-BLIP*) of 2.6 x 10(10) Jones under 300 K background and -0.3 V bias voltageen_US
dc.language.isoengen_US
dc.publisherAmer Inst Physicsen_US
dc.relation.isversionof10.1063/1.4745841en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleN structure for type-II superlattice photodetectorsen_US
dc.typearticleen_US
dc.relation.journalApplied Physics Lettersen_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume101en_US
dc.identifier.issue7en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorErgün, Yüksel


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