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dc.contributor.authorEs, Fırat
dc.contributor.authorBaytemir, Gülsen
dc.contributor.authorKulakcı, Mustafa
dc.contributor.authorTuran, Raşit
dc.date.accessioned2019-10-20T09:13:31Z
dc.date.available2019-10-20T09:13:31Z
dc.date.issued2017
dc.identifier.issn0927-0248
dc.identifier.issn1879-3398
dc.identifier.urihttps://dx.doi.org/10.1016/j.solmat.2016.10.032
dc.identifier.urihttps://hdl.handle.net/11421/16949
dc.descriptionWOS: 000390072700033en_US
dc.description.abstractWe demonstrate the fabrication of nano-sized surface textured crystalline silicon by a metal-assisted electroless etching method with nitric acid added as the hole injection agent. This method generates randomly shaped cone-like structures that offer a clear advantage over nanowires by enabling straightforward passivation with standard techniques. Average reflection values as low as 3% have been achieved. Optimizing the thickness of anti-reflective coatings, the doping depth and the screen-printed metal firing process increases the short circuit current of the cell by 0.82 mA/cm(2) over the reference cells, which had a pyramidal texture without nano texturing.en_US
dc.language.isoengen_US
dc.publisherElsevier Science BVen_US
dc.relation.isversionof10.1016/j.solmat.2016.10.032en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMetal-Assisted Etchingen_US
dc.subjectTexturingen_US
dc.subjectSilicon Solar Cellsen_US
dc.subjectNano-Textureen_US
dc.titleMetal-assisted nano-textured solar cells with SiO2/Si3N4 passivationen_US
dc.typearticleen_US
dc.relation.journalSolar Energy Materials and Solar Cellsen_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume160en_US
dc.identifier.startpage269en_US
dc.identifier.endpage274en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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