Copper (II) Phthalocyanine Based Field Effect Transistors with Organic/Inorganic Bilayer Gate Dielectric

Abstract

High mobility Copper (II) phthalocyanine (CuPc) organic field effect transistor (OFET) with Polyvinyl Alcohol (PVA)/Anodized Aluminium Oxide (Al2O3) bilayer gate dielectric was fabricated. The morphology of CuPc active layer and electrical properties of OFET were investigated. The CuPc-OFET exhibited the p-channel behavior due to the p-type electrical conductivity of the CuPc active layer. Field-effect carrier mobility (mu) value of 0.06 cm(2)/Vs, which is attributed to the use of bilayer dielectric combined with the organic and inorganic materials as gate insulator, was obtained. As a result of capacitance-voltage (C-V) the bilayer gate dielectric capacitance per unit area was found 40 nF/cm(2). This capacitance indicates that dielectric film obtained by a combination of organic and inorganic materials has a good quality. Experimental results showed that bilayer gate dielectric is a promising insulator for the low drive voltage CuPc-OFETs.