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dc.contributor.authorKulakçı, Mustafa
dc.contributor.authorSerincan, Uğur
dc.contributor.authorTuran, Raşit
dc.contributor.authorFinstad, Terje G.
dc.date.accessioned2019-10-20T09:14:01Z
dc.date.available2019-10-20T09:14:01Z
dc.date.issued2008
dc.identifier.issn0957-4484
dc.identifier.urihttps://dx.doi.org/10.1088/0957-4484/19/45/455403
dc.identifier.urihttps://hdl.handle.net/11421/17129
dc.descriptionWOS: 000259922000018en_US
dc.descriptionPubMed ID: 21832777en_US
dc.description.abstractThe quantum confined Stark effect (QCSE) in Si nanocrystals embedded in a SiO(2) matrix is demonstrated by photoluminescence (PL) spectroscopy at room and cryogenic temperatures. It is shown that the PL peak position shifts to higher wavelengths with increasing applied electric field, which is expected from carrier polarization within the quantum dots. It is observed that the effect is more pronounced at lower temperatures due to the improved carrier localization at the lowest energy states of the quantum dots. Experimental results are shown to be in good agreement with phenomenological model developed for the QCSE model.en_US
dc.description.sponsorshipEuropean Commission [NMP4-2004-505285]en_US
dc.description.sponsorshipThis work has been partially supported by the European Commission through the FP6 project called SEMINANO under contract NMP4-2004-505285. The authors would like to thank Professors Dr Lorenzo Pavesi and Dr Atilla Aydinli for valuable comments and discussions.en_US
dc.language.isoengen_US
dc.publisherIOP Publishing LTDen_US
dc.relation.isversionof10.1088/0957-4484/19/45/455403en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleThe quantum confined Stark effect in silicon nanocrystalsen_US
dc.typearticleen_US
dc.relation.journalNanotechnologyen_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume19en_US
dc.identifier.issue45en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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