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dc.contributor.authorIrmak, S.
dc.contributor.authorKul, M.
dc.date.accessioned2019-10-20T09:30:57Z
dc.date.available2019-10-20T09:30:57Z
dc.date.issued2007
dc.identifier.issn0094243X
dc.identifier.urihttps://dx.doi.org/10.1063/1.2733349
dc.identifier.urihttps://hdl.handle.net/11421/17534
dc.description6TH International Conference of the Balkan Physical Union -- 22 August 2006 through 26 August 2007 -- Istanbul --en_US
dc.description.abstractThe fluorine doped cadmium oxide (CdO:F) samples have been deposited by ultrasonic spray pyrolysis method (USP). The absorption spectra of the samples showed that CdO:F is a direct band gap material. The direct optical transition has shifted towards the shorter wavelengths, and the transparency of the material has increased at a given wavelength above the fundamental absorption edge. The optical band gap (Eg) has found to be 2,28 eV for undoped CdO films. A shift in the absorption edge of the fluorine doped CdO films with increasing fluorine concentration is explained by means of the Moss-Burstein effecten_US
dc.language.isoengen_US
dc.relation.isversionof10.1063/1.2733349en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBand Gap Energyen_US
dc.subjectCadmium Oxideen_US
dc.subjectFluorineen_US
dc.subjectUltrasonic Spray Pyrolysisen_US
dc.titleBand gap energies of CdO:F semiconductor films produced by ultrasonic spray pyrolysis methoden_US
dc.typeconferenceObjecten_US
dc.relation.journalAIP Conference Proceedingsen_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.identifier.volume899en_US
dc.identifier.startpage608en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US


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