Yazar "Arıkan, Bülent" için Fen Fakültesi listeleme
-
Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p-i-n versus residual doping
Korkmaz, Melih; Kaldirim, Melih; Arıkan, Bülent; Serincan, Uğur; Aslan, Bülent (IOP Publishing LTD, 2015)We report on the opto-electronic characterization of an InAs/GaSb superlattice (SL) midwave infrared p-i-n photodetector structure (pin-SL) in comparison with the same structure with no intentional doping (i-SL). Both ... -
Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate
Serincan, Uğur; Arıkan, Bülent; Şenel, Onur (Academic Press LTD- Elsevier Science LTD, 2018)We report on the direct growth and characterization of type-II InAs/GaSb superlattice (T2SL) MWIR photodetector structure grown on a GaAs substrate by molecular beam epitaxy. The designed photodetector structure contains ... -
Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
Tansel, Tunay; Kutluer, Kutlu; Salihoğlu, Ömer; Aydınlı, Atilla; Aslan, Bülent; Arıkan, Bülent; Turan, Raşit (IEEE-Inst Electrical Electronics Engineers Inc, 2012)The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ... -
On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses
Arıkan, Bülent; Korkmaz, Güven; Suyolcu, Yusuf Eren; Aslan, Bülent; Serincan, Uğur (Elsevier Science Sa, 2013)We report on the detailed epitaxial growth conditions for type-II InAs/GaSb superlattice (SL) structures designed for mid-wave infrared detection. The mismatch between the GaSb buffer and the SL is precisely controlled by ... -
Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array
Korkmaz, Melih; Arıkan, Bülent; Suyolcu, Yusuf Eren; Aslan, Bülent; Serincan, Uğur (IOP Publishing LTD, 2018)We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the ... -
Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure
Arpapay, B.; Şahin, S.; Arıkan, Bülent; Serincan, Uğur (Elsevier Science Sa, 2014)The effect of four different cooling receipts on the surface morphologies of unintentionally-doped GaSb epilayers on GaSb (100) substrates grown by molecular beam epitaxy is reported. Those receipts include three different ... -
Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces
Arıkan, Bülent; Korkmaz, Melih; Aslan, Bülent; Serincan, Uğur (Elsevier Science Sa, 2015)In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically ...