Yazar "Serincan, Uğur" için Fen Fakültesi listeleme
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Characterization of a multilayer GaAs/AlGaAs broadband quantum well infrared photodetectors
Kuru, H.; Arpapay, B.; Karakulak, T.; ArıKan, Betül; Aslan, B.; Serincan, Uğur (2010)In this study, we report on the investigation of two multilayer GaAs/AlGaAs quantum well infrared photodetectors designed for 8-12 µm spectral range detection. Fabricated devices were characterized by current-voltage and ... -
Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p-i-n versus residual doping
Korkmaz, Melih; Kaldirim, Melih; Arıkan, Bülent; Serincan, Uğur; Aslan, Bülent (IOP Publishing LTD, 2015)We report on the opto-electronic characterization of an InAs/GaSb superlattice (SL) midwave infrared p-i-n photodetector structure (pin-SL) in comparison with the same structure with no intentional doping (i-SL). Both ... -
Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation
Yerci, S.; Yıldız, I.; Kulakcı, Mustafa; Serincan, Uğur; Barozzi, M.; Bersani, M.; Turan, R. (Amer Inst Physics, 2007)Depth profiles of Si nanocrystals formed in sapphire by ion implantation and the effect of charging during X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) measurements have been studied. ... -
Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate
Serincan, Uğur; Arıkan, Bülent; Şenel, Onur (Academic Press LTD- Elsevier Science LTD, 2018)We report on the direct growth and characterization of type-II InAs/GaSb superlattice (T2SL) MWIR photodetector structure grown on a GaAs substrate by molecular beam epitaxy. The designed photodetector structure contains ... -
Evolution of Vibrational Modes of SiO2 During the Formation of Ge and Si Nanocrystals by Ion Implantation and Magnetron Sputtering
Imer, A. Gençer; Yerci, S.; AlagÖz, A. S.; Kulakçı, M.; Serincan, Uğur; Finstad, T. G.; Turan, R. (Amer Scientific Publishers, 2010)Structural variations of SiOx matrix have been studied with Fourier Transform Infrared Spectroscopy (FTIR) during the formation of Si and Ge nanocrystal. Two frequently used methods, magnetron sputtering and ion implantation ... -
Growth, Fabrication and Characterization of Quantum Dot Intermediate Band Solar Cell
Serincan, Uğur; Kuru Mutlu, Hülya; Kulakçı, Mustafa (Gazi University, 2017)Stacked layers of self-assembled InAs quantum dots were synthesized within the base region close to the back surface field of GaAs single junction n- on p-solar cell. The solar cell structure was grown epitaxially on p-type ... -
On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses
Arıkan, Bülent; Korkmaz, Güven; Suyolcu, Yusuf Eren; Aslan, Bülent; Serincan, Uğur (Elsevier Science Sa, 2013)We report on the detailed epitaxial growth conditions for type-II InAs/GaSb superlattice (SL) structures designed for mid-wave infrared detection. The mismatch between the GaSb buffer and the SL is precisely controlled by ... -
Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array
Korkmaz, Melih; Arıkan, Bülent; Suyolcu, Yusuf Eren; Aslan, Bülent; Serincan, Uğur (IOP Publishing LTD, 2018)We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the ... -
Phonon frequency variations in high quality InAs1-xSbx epilayers grown on GaAs
Erkus, M.; Serincan, Uğur (Elsevier Science BV, 2014)Undoped InAs1-xSbx epilayers with different compositions (0.55 <= x <= 0.78) were grown by molecular beam epitaxy on semi-insulating GaAs (1 0 0) substrates. The quality of the samples was determined by high resolution ... -
The quantum confined Stark effect in silicon nanocrystals
Kulakçı, Mustafa; Serincan, Uğur; Turan, Raşit; Finstad, Terje G. (IOP Publishing LTD, 2008)The quantum confined Stark effect (QCSE) in Si nanocrystals embedded in a SiO(2) matrix is demonstrated by photoluminescence (PL) spectroscopy at room and cryogenic temperatures. It is shown that the PL peak position shifts ... -
Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure
Arpapay, B.; Şahin, S.; Arıkan, Bülent; Serincan, Uğur (Elsevier Science Sa, 2014)The effect of four different cooling receipts on the surface morphologies of unintentionally-doped GaSb epilayers on GaSb (100) substrates grown by molecular beam epitaxy is reported. Those receipts include three different ... -
Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces
Arıkan, Bülent; Korkmaz, Melih; Aslan, Bülent; Serincan, Uğur (Elsevier Science Sa, 2015)In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically ... -
Structural and optical properties of Al2O3 with Si and Ge nanocrystals
Yerci, S.; Yıldız, I.; Seyhan, A.; Kulakçı, M.; Serincan, Uğur; Shandalov, M.; Turan, R. (2007)Si and Ge nanocrystals were formed in Al2O3 matrix by ion implantation and subsequent annealing. The phase separation of the Si nanocrystals was observed using X-ray photoelectron spectroscopy by monitoring Si 2p electrons. ... -
Structural and optical properties of porous nanocrystalline Ge
Nanocrystalline Ge films were prepared by isotropic chemical etching on single-crystalline Ge substrates with 100 and 111 orientations. The structural and optical properties have been investigated by transmission electron ... -
Structural, optical and electrical characterization of InAs0.83Sb0.17 p-pi-n photodetector grown on GaAs substrate
Erkus, M.; Şenel, O.; Serincan, Uğur (Elsevier Science Sa, 2016)High quality InAs0.83Sb0.17 mid-wavelength infrared p-pi-n photodetector structure was grown with the aid of a GaSb transition layer on semi-insulating GaAs substrate by molecular beam epitaxy. The lattice mismatch and the ... -
Variation of photoluminescence from Si nanostructures in SiO2 matrix with Si+ post implantation
Serincan, Uğur; Kulakçı, M.; Turan, Raşit; Foss, S.; Finstad, T. G. (2007)Si nanoclusters were formed by 28Si ion implantation into SiO2 matrix and subsequently annealed at 1050 °C for 2 h under N2 ambient. The photoluminescence (PL) characteristics depend on the 28Si fluence. The PL signals ...