Microstructure-property relationship in textured ZnO-based varistors

Abstract

The relationship between microstructure texturing and electrical characteristics of a ZnO-based varistor system was investigated in comparison with a varistor system having the same chemical composition but conventional microstructure. Highly textured ZnO-based varistors were produced via the templated grain growth (TGG) technique. Stereological analysis, electron back-scattered diffractometry (EBSD) and X-ray diffractometry (XRD) were conducted to analyze texture development and orientation distribution. The degree of orientation, r, calculated from the (0 0 0 1) EBSD pole figure, was 0.34; the texture fraction, f (Lotgering factor), calculated from the XRD data, was 0.98 for the samples produced via TGG. The threshold voltages were found to be anisotropic, consistent with the observed morphological texture. The non-linear coefficients, a, did not exhibit a significant difference as a function of direction, even in the highly textured samples. However, different types of grain boundary characteristics depending on the direction were identified with 0.42, 0.69 and 1.14 eV Schottky barrier heights.