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dc.contributor.authorÖksüzoğlu, Ramis Mustafa
dc.contributor.authorDeniz, O.
dc.contributor.authorYıldırım, M.
dc.date.accessioned2019-10-22T16:59:20Z
dc.date.available2019-10-22T16:59:20Z
dc.date.issued2013
dc.identifier.issn1454-4164
dc.identifier.urihttps://hdl.handle.net/11421/21824
dc.description.abstractTa/Ru/Ta/Ni81Fe19/Ir20Mn 80/Co90Fe10 exchange bias multilayer was grown by using pulsed DC unbalanced magnetron sputtering technique. The deposition pulse frequency of the NiFe seed layer has been varied between 10 - 50 kHz, by keeping all parameters of the remaining layers constant. The evolutions of the grain size, texture, interface roughness and the exchange bias (Hex) and coercivity fields (Hc) including the Hex/Hc ratio have been systematically investigated. Grain size of the IrMn layer changes in the range of 8.9 nm-22 nm by constant layer thicknesses. The H ex is directly affected by the IrMn grain size for the bottom NiFe/IrMn interface, while it remains nearly insensitive to the grain size for the top IrMn/CoFe interface. The Hex at the NiFe/IrMn interface is largest if the grain size of the IrMn layer is same as the IrMn layer thickness. A direct relationship between the Hc and grain size values was not observed; however, the Hc is predominantly affected by the roughness of NiFe/IrMn and IrMn/CoFe interfaces. Results reveal that the texture and interface roughness plays an important role on the Hex/Hc ratio and deposition conditions for the ferromagnetic layer can be optimized using the variable deposition pulse frequency for a high Hex/H c ratio in the investigated trilayer EB system.en_US
dc.language.isoengen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGrain Sizeen_US
dc.subjectInterface Roughnessen_US
dc.subjectMagnetic Anisotropyen_US
dc.subjectMagnetic Properties Of Monolayers And Thin Filmsen_US
dc.subjectPulsed Dc Magnetron Sputteringen_US
dc.titleInterface roughness and exchange bias - Coercivity ratio in Pulsed-DC magnetron sputtered NiFe/IrMn/CoFe exchange bias trilayersen_US
dc.typearticleen_US
dc.relation.journalJournal of Optoelectronics and Advanced Materialsen_US
dc.contributor.departmentAnadolu Üniversitesi, Mühendislik Fakültesi, Malzeme Bilimi ve Mühendisliği Bölümüen_US
dc.identifier.volume15en_US
dc.identifier.issue3.Nisen_US
dc.identifier.startpage204en_US
dc.identifier.endpage210en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorÖksüzoğlu, Ramis Mustafa


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