Yazar "Tıraş, Engin" için listeleme
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Grafen yapılarda SdH yöntemi ile güç kaybı mekanizmalarının incelenmesi
Ardalı, Şükrü (Anadolu Üniversitesi, 2017)Bu doktora tez çalışmasında SiO2/Si ve SiC alttaşlar üzerine büyütülmüş tek katman grafen örneklerin galvonomagnetik ölçümleri yapıldı. Düşük magnetik alan değerlerinde yapılan klasik Hall olayı ölçümleri sabit magnetik ... -
In rich In1-xGaxN: Composition dependence of longitudinal optical phonon energy
Tıraş, Engin; Güneş, M.; Balkan, Naci; Schaff, W. J. (Wiley-Blackwell, 2010)The composition dependence of longitudinal optical (LO) phonon energies in undoped and Mg-doped In1-xGaxN samples are determined using Raman spectroscopy in the range of Ga fraction from x = 0 to x = 56%. The LO phonon ... -
InN ve GaInN örneklerde galvanomagnetik ölçümler
Ardalı, Şükrü (Anadolu Üniversitesi, 2010)Bu tezde InN ve Ga1-xInxN örneklerde galvonomagnetik ölçümler yapıldı. Deneylerde üç farklı örnek grubu kullanıldı. Örnekler Molecular Beam Epitaxy (MBE) büyütme sistemi ile Cornell Üniversitesi (Amerika Birleşik Devletleri) ... -
Longitudinal polar optical phonons in InN/GaN single and double heterostructures
Ardalı, Şükrü; Tıraş, Engin; Güneş, Mustafa; Balkan, Naci; Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros (Wiley-V C H Verlag GMBH, 2011)Longitudinal optical phonon energy in InN epi-layers has been determined independently from the Raman spectroscopy and temperature dependent Hall mobility measurements. Raman spectroscopy technique can be used to obtain ... -
Micro-laser assisted machining of semiconductors and ceramics
Poyraz, Hüseyin Boğaç (Anadolu Üniversitesi, 2011)Bu doktora tezinin amaci; çok sert ve son derece kırılgan olduğundan geleneksel yöntemler ile işlenmesi çok zor olan Si ve SiC gibi seramikler ve yarı iletkenler için mikro (?) Lazer Destekli İşlemenin (LAM) hassas işleme ... -
Nitrat bazlı yarıiletken nanoyapılarda kapasitans-voltaj ölçümü
Yazıcı, Esra (Anadolu Üniversitesi, 2011)Bu tezde oda sıcaklığında InN veGa?-xInxNyAs?-y örneklerde kapasitans-voltaj (C-V) ve kapasitans frekans (C-f) ölçümleriyapıldı.Deneylerdekullanılan örneklerMolecular Beam Epitaxy (MBE) büyütme sistemi ile, Crete Üniversitesi ... -
Performance study of SQW GaInNAs fabry-perot lasers
Tıraş, Engin; Hepburn, C. J.; Balkan, Naci; Saarinen, M.; Pessa, M.; Jouhti, T. (Wiley-V C H Verlag GMBH, 2007)The work presented here is concerned with studies of the operational characteristics of single-quantum-well GaInNAs/GaAs Fabry-Perot lasers, where identical layer structures with differing cavity lengths are evaluated both ... -
Power Loss Mechanisms in Indium-Rich InGaN Samples
Tıraş, Engin; Mutlu, Selman; Balkan, Naci (Springer, 2016)Molecular beam epitaxy-grown InxGa1-xN/GaN samples with indium fraction x ranging between 0.44 and 0.784 were studied by pulsed current-voltage (I-V) measurements at 1.7 K. The drift velocity, electron mobility, and ... -
Power-loss mechanisms in surface passivated AlGaN/AlN/GaN heterojunctions
Tıraş, Engin; Atmaca, G.; Lisesivdin, S. B.; Ardalı, Şükrü; Malin, T.; Mansurov, V.; Zhuravlev, K. (Institute of Electrical and Electronics Engineers Inc., 2016)The surface passivation effect on the power-loss mechanisms in AlGaN/AlN/GaN heterostructures was investigated. The electron temperatures of hot electrons was obtained from the temperature and the applied electric field ... -
Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells
Tıraş, Engin; Balkan, Naci; Ardalı, Şükrü; Güneş, M.; Fontaine, C.; Arnoult, A. (Taylor & Francis LTD, 2011)Electronic transport in n-and p-type modulation-doped Ga0.7In0.3N0.015As0.985/GaAs quantum wells are investigated using magneto-transport measurements in the temperature range between T = 1.8 and 32K and at magnetic fields ... -
Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer
Atmaca, G.; Ardalı, Şükrü; Tıraş, Engin; Malin, T.; Mansurov, V. G.; Zhuravlev, K. S.; Lisesivdin, S. B. (Pergamon-Elsevier Science LTD, 2016)The scattering mechanisms limiting mobility for low-dimensional charge carriers in a two-dimensional electron gas (2DEG) in undoped and doped AlGaN/AlN/GaN heterostructures with and without Si3N4 passivation are investigated. ... -
Superconductivity in heavily compensated Mg-doped InN
Tıraş, Engin; Güneş, M.; Balkan, Naci; Airey, R.; Schaff, W. J. (Amer Inst Physics, 2009)We report superconductivity in Mg-doped InN grown by molecular beam epitaxy. Superconductivity phase transition temperature occurs T-c=3.97 K as determined by magnetoresistance and Hall resistance measurements. The ... -
Superconductivity in MBE grown InN
Güneş, M.; Balkan, Naci; Tıraş, Engin; Ardalı, Şükrü; Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, A. (Wiley-V C H Verlag GMBH, 2011)We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82K, for an 1080 nm InN ... -
Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures
Tıraş, Engin; Çelik, Özlem; Mutlu, Selman; Ardalı, Şükrü; Lisesivdin, Sefer Bora; Özbay Ekmel (Academic Press LTD- Elsevier Science LTD, 2012)The two-dimensional (2D) electron energy relaxation in Al0.25Ga0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ... -
Thermally activated flux mechanism in Mg-doped InN epitaxial film
Güneş, Mustafa; Akyol, Mustafa; Ekicibil, Ahmet; Tıraş, Engin (Taylor & Francis LTD, 2017)The superconducting behaviour of InN has been observed in many experiments where the origin of superconductivity is addressed to presence of (i) In-In chains in ab-plane, (ii) specific carrier density range limited Mott ... -
The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene
Arslan, Engin; Ardalı, Şükrü; Tıraş, Engin; Cakmakyapan, Semih; Özbay Ekmel (Taylor & Francis LTD, 2017)The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on an SiO2/Si substrate have been investigated using the Shubnikov-de Haas (SdH) oscillations technique. ... -
The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation
Ardalı, Şükrü; Atmaca, G.; Lisesivdin, S. B.; Malin, T.; Mansurov, V.; Zhuravlev, K.; Tıraş, Engin (Wiley-V C H Verlag GMBH, 2015)The effects of surface passivation effect on electron mobility and crystal structure in Al0.3Ga0.7N/AlN/GaN heterostructures are investigated by classical Hall effect measurements and an X-ray diffraction method. ...