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dc.contributor.authorÖzdemir, Samet
dc.contributor.authorSuyolcu, Y. Eren
dc.contributor.authorTuran, Servet
dc.contributor.authorAslan, Bülent
dc.date.accessioned2019-10-19T21:03:51Z
dc.date.available2019-10-19T21:03:51Z
dc.date.issued2017
dc.identifier.issn0169-4332
dc.identifier.issn1873-5584
dc.identifier.urihttps://dx.doi.org/10.1016/j.apsusc.2016.08.162
dc.identifier.urihttps://hdl.handle.net/11421/15685
dc.descriptionWOS: 000389088300091en_US
dc.description.abstractWe report on the growth and characterization of self-assembled InAs/GaAs quantum dots (QDs). The influence of the systematically changed growth conditions on the opto-electronic and structural properties of the QDs were investigated. Combination of the amount of the deposited InAs, growth temperature and growth rate were optimized for low As/In flux ratio to obtain well-resolved ground and excited states in the low temperature photoluminescence (PL) spectra. SEM and TEM techniques were also used for the characterization of QDs. The results were evaluated simply through the conservation of mass approximation and the x-ray diffraction measurements with fitted curves. The extracted InAs and wetting layer thicknesses were brought out that the XRD analysis reflects the overall tendency of the QD density change and WL behaviors in response to the changes in growth conditions.en_US
dc.description.sponsorshipAnadolu University [BAP-1205F086]en_US
dc.description.sponsorshipThis study was supported in part by Anadolu University under the project BAP-1205F086. Authors would like to thank Dr. Erhan Ayas for AFM images and Dr. Ugur Serincan and Dr. Bulent Arikan for their valuable guidance in the MBE growth processes.en_US
dc.language.isoengen_US
dc.publisherElsevier Science BVen_US
dc.relation.isversionof10.1016/j.apsusc.2016.08.162en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectQuantum Doten_US
dc.subjectSelf-Assembleden_US
dc.subjectMolecular Beam Epitaxyen_US
dc.subjectPhotoluminescenceen_US
dc.titleInfluence of the growth conditions on the optical and structural properties of self-assembled InAs/GaAs quantum dots for low As/In ratioen_US
dc.typearticleen_US
dc.relation.journalApplied Surface Scienceen_US
dc.contributor.departmentAnadolu Üniversitesi, Fen Bilimleri Enstitüsü, İleri Teknolojiler Anabilim Dalıen_US
dc.identifier.volume392en_US
dc.identifier.startpage817en_US
dc.identifier.endpage825en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US]
dc.contributor.institutionauthorTuran, Servet


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